Increasing Demand from Multiple Application Segments is Creating Growth Opportunities for Development of Multi-level Cell NAND Flash Memory Market | Micron Technology, Pure Storage, Delkin Devices, Innodisk, Apacer, Supermicro

In electronics, a multi-level cell (MLC) is a memory cell capable of storing more than a single bit of information, compared to a single-level cell (SLC) which can store only one bit per memory cell. A memory cell typically consists of a single floating gate MOSFET (metal-oxide-semiconductor field-effect transistor), thus multi-level cells reduce the number of MOSFETs required to store the same amount of data as single-level cells.

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Triple-level cells (TLC) and quad-level cells (QLC) are versions of MLC memory, which can store three and four bits per cell, respectively. The name "multi-level cell" is sometimes used specifically to refer to the "two-level cell". Overall, the memories are named as Single-Level Cell or SLC (1 bit per cell), Multi-Level Cell or MLC (2 bits per cell), Triple-Level Cell or TLC (3 bits per cell), Quad-Level Cell or QLC (4 bits per cell), and Penta-Level Cell or PLC (5 bits per cell) – currently in development.

Typically, as the 'level' count increases, performance (speed and reliability) and consumer cost decrease; however this correlation can vary between manufacturers. Examples of MLC memories are MLC NAND flash, MLC PCM (phase change memory), etc. For example, in SLC NAND flash technology, each cell can exist in one of the two states, storing one bit of information per cell. Most MLC NAND flash memory has four possible states per cell, so it can store two bits of information per cell. This reduces the amount of margin separating the states and results in the possibility of more errors. Multi-level cells which are designed for low error rates are sometimes called enterprise MLC (eMLC). There are tools for modeling the area, latency, and energy of MLC memories. New technologies, such as multi-level cells and 3D Flash, and increased production volumes will continue to bring prices down.

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Mobile Phones and SSDs Segment to Have Maximum Demand

Based on the product type, the global multi-level cell NAND flash memory market can be segmented into 2D and 3D. Of these, the 3D segment is expected to witness promising growth opportunities in the coming years of the forecast period ranging from 2015 to 2026.

In terms of application, the global multi-level NAND flash memory market can be segmented into SSDs, tablets, smart phones, radio, TV sets, handheld audio calling device, microwave equipment device, and others. Of these, the segment of smart phones and SSDs are expected to witness promising growth opportunities in the coming years of the forecast period. the growth of the segments can be primarily attributed to the increasing demand for these products from the masses and the fact that constant technological advancements required to make these products better and more efficient.

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Based on the region, the global multi-level NAND flash memory market can be segmented into five key regions. These regions are North America, Latin America, Europe, Asia Pacific, and the Middle East and Africa. Of these, the regional segment of North America has the lion’s share in the global multi-level NAND flash memory market. On the other hand, the regional segment of Asia Pacific is expected to emerge as the fastest growing segment.

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