IGBT and Thyristor Market 2020 Precise Outlook – ABB, Fuji, Electric, Infineon Technologies, Mitsubishi Electric Corp, Renesas Electronics Corp

The IGBT and thyristor market was valued at US$ 5.15 billion in 2019 and is projected to reach US$ 6.96 billion by 2027; it is expected to grow at a CAGR of 4.1% from 2020 to 2027.

The global IGBT and Thyristor market is experiencing remarkable growth attributed to the replacement of aging power infrastructure, particularly in developed economies, as well as the deployment of smart grids. IGBTs and thyristors are integrated into power electronics such as controllers and inverters, as well as power supplies, to fulfill the demand for solid-state switching devices. Moreover, the demand for electricity is constantly increasing owing to the rising population in developing economies.

IGBTs and thyristors are used for low switching losses and short switching times of metal-oxide-semiconductor field-effect transistor (MOSFET) to meet the current electricity demands. Further, they also use conduction losses along with high breakdown voltage in bipolar junction transistor (BJT) to achieve high electricity demands. Additionally, IGBTs and Thyristors reduce thermal stress leading to longer lifespan and reliability of electric devices. IGBT and thyristor are gaining acceptance due to advantages such as high external thermal performance along with efficiency.

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The Major Market Player Included in This Report are: ABB Ltd., Fuji, Electric Co., Ltd., Infineon Technologies AG, Mitsubishi Electric Corporation, Renesas Electronics Corporation, Rohm Co., Ltd., ON Semiconductor, Semikron, STMicroelectronics, and Vishay Intertechnology.

Scope of the Report:
The research on the IGBT and Thyristor market concentrates on extracting valuable data on swelling investment pockets, significant growth opportunities, and major market vendors to help understand business owners what their competitors are doing best to stay ahead in the competition. The research also segments the IGBT and Thyristor market on the basis of end-user, product type, application, and demography for the forecast period 2020–2027. Detailed analysis of critical aspects such as impacting factors and competitive landscape are showcased with the help of vital resources, which include charts, tables, and info graphics.

For more clarity on the real potential of the IGBT and Thyristor market for the forecast period 2020–2027, the study provides vital intelligence on major opportunities, threats, and challenges posed by the industry. Additionally, a strong emphasis is laid on the weaknesses and strengths of a few prominent players operating in the same market.
Quantitative assessment of the recent momentum brought about by events such as collaborations, acquisition and mergers, product launches and technology innovation empower product owners, as well as marketing professionals and business analysts make a profitable decision to reduce cost and increase their customer base.

Geographically, this report focuses on product sales, value, market share, and growth opportunity in key regions such as United States, Europe, China, Japan, Southeast Asia, and India.

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The objective of this report is as follows:

• To provide overview of the global IGBT and Thyristor market

• To analyze and forecast the global IGBT and Thyristor market on the basis of technology, solution, end-user vertical

• To provide market size and forecast till 2027 for overall IGBT and Thyristor market with respect to five major regions, namely; North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America (SAM), which is later sub-segmented by respective countries

• To evaluate market dynamics effecting the market during the forecast period i.e., drivers, restraints, opportunities, and future trend

• To provide exhaustive PEST analysis for all five regions

• To profiles key IGBT and Thyristor players influencing the market along with their SWOT analysis and market strategies

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