Gallium Nitride RF Semiconductor Device Market Detailed Analysis of Current Industry Figures With Forecasts Growth by 2026 | Cree, Samsung, Infineon, Qorvo, MACOM

Latest Industry Research Report On global Gallium Nitride RF Semiconductor Device Market Research Report 2020 in-depth analysis of the market state and also the competitive landscape globally.

The Gallium Nitride RF Semiconductor Device market report provides information regarding market size, share, trends, growth, cost structure, global market competition landscape, market drivers, challenges and opportunity, capacity, revenue, and forecast 2025. This report also includes the overall and comprehensive study of the Gallium Nitride RF Semiconductor Device market with all its aspects influencing the growth of the market. This report is exhaustive quantitative analyses of the Gallium Nitride RF Semiconductor Device industry and provides data for making strategies to increase market growth and effectiveness.

This study also analyzes the market status, market share, growth rate, future trends, market drivers, opportunities, and challenges, risks and entry barriers, sales channels, distributors and Porter's Five Forces Analysis.

Scope of the report:

The report evaluates the growth rate and the Market value based on Market dynamics, growth inducing factors. Complete knowledge is based on the latest industry news, opportunities, and trends. The report contains a comprehensive Market analysis and vendor landscape in addition to a SWOT analysis of the key vendors.

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The Following Top Key Players in the Gallium Nitride RF Semiconductor Device Market: Cree (US), Samsung (South Korea), Infineon (Germany), Qorvo (US), MACOM (US), Microchip Technology(US), Analog Devices (US), Mitsubishi Electric (Japan), Efficient Power Conversion (US), GaN Systems (Canada), Exagan (France), VisIC Technologies (Israel), Integra Technologies (US), Transphorm (US), Navitas Semiconductor (US), Nichia (Japan), Panasonic (Japan), Texas Instruments (US), and others.

Industry News: APRIL 12, 2018

Cree Licenses GaN Power Patents to Nexperia

DURHAM, N.C. -- Cree, Inc. announces that it signed a non-exclusive, worldwide, royalty-bearing patent license agreement with Nexperia BV, a Dutch company. The agreement provides Nexperia access to Cree’s extensive gallium nitride (GaN) power device patent portfolio, which includes over 300 issued U.S. and foreign patents that describe inventive aspects of high electron mobility transistor (HEMT) and GaN Schottky diode devices. The portfolio addresses novel device structures, materials and processing improvements, and packaging technology. The patent license involves no transfer of technology.

“Cree was founded to develop novel compound semiconductor materials like GaN and SiC and to create devices that capitalize on their unique properties,” said John Palmour, Cree co-founder and CTO of Wolfspeed, a Cree company. “Cree’s decades of innovation are now yielding devices that enable market introductions of new power management and wireless systems. To help facilitate the growth of these new markets, Cree is licensing its GaN power device patents for GaN power-management systems.”

This report segments the Gallium Nitride RF Semiconductor Device market on the basis of Types are:

2 Inch
4 Inch
6-Inch and Above
Others

On the basis of Application, the Gallium Nitride RF Semiconductor Device market is segmented into:

Power Drivers
Supply and Inverter
Radio Frequency
Lighting and Laser
Others

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Regional outlook: The regions covered in the reports of the Gallium Nitride RF Semiconductor Device market are

North America (United States, Canada, and Mexico), Asia-Pacific (China, India, Japan, South Korea, Australia, Indonesia, Malaysia, Philippines, Thailand, Vietnam), Europe (Germany, France, UK, Italy, Russia, Rest of Europe), Central & South America (Brazil, Rest of South America), and Middle East & Africa (GCC Countries, Turkey, Egypt, South Africa, Other).

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