RF Power Semiconductor Market Analysis and Forecast 2020: By Keyplayers nfineon Technologies AG, M/A-COM Technology Solutions Holdings, Inc., NXP Semiconductors N.V., Qorvo, Inc., Broadcom Limited, Toshiba Corporation, Qualcomm Inc., Skyworks Solutions, I

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A radio-frequency power semiconductor is a device that can be utilized as switch or rectifier in power electronics. This RF power semiconductor is designed to work in radio-frequency spectrum, which is about 3 kHz up to 300 Ghz.

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Increasing use of long-term evolution (LTE) and deployment of next-generation wireless networks such as 5G are key factors that are expected to have a positive impact on the growth of the global radio-frequency (RF) power semiconductor devices market during the forecast period, owing to the increasing popularity of mobile computing devices such as smartphones and tablets. Increase in adoption of wireless technology such as LTE demanding for RF features in smartphones, tablets, and other relevant devices due to the requirement to improve high-performance RF filters to cater the requirements of smartphones and other relevant device OEMs are the factors fueling the growth of RF power semiconductors market. According to Coherent Market Insights analysis, in 2016, around 350 units of mobile devices were sold globally, which accounted for an increase of over 3.7% from 2015. Revenue generated by smartphone devices accounted for over 70% sales of the global mobile devices in 2016. According to global internet report 2016 published by Internet Society Organization, in 2015 total internet users was about 3 billion and in 2016 the total count of internet users was over 3.2 billion.

However, the increase in the cost of RF devices is expected to restraint the growth of the global RF power semiconductor market.

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RF Power Semiconductor Market: Competitive Background

Major players operating in the global RF power semiconductor market includes Infineon Technologies AG, M/A-COM Technology Solutions Holdings, Inc., NXP Semiconductors N.V., Qorvo, Inc., Broadcom Limited, Toshiba Corporation, Qualcomm Inc., Skyworks Solutions, Inc., Mitsubishi Electric Corporation, and Murata Manufacturing.

RF Power Semiconductor Market: Regional Insights

The global RF power semiconductor market on the basis of region is segmented into North America, Europe, Asia Pacific, Latin America, Middle East, and Africa. Asia Pacific region is expected to hold a dominant position in global RF power semiconductor market by 2025. The growth in the regional market is attributed to the increased demand for consumer electronics products. In Asia Pacific region, emerging economies such as India and China are manufacturing hubs for consumer electronic products, including smartphones, home appliances, and televisions. According to Coherent Market Insights analysis, in 2016, over 450 million units of smartphone devices were sold in China. Low manufacturing cost in China, Taiwan, and Malaysia is also expected to boost the growth of the regional RF power semiconductor market.

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RF Power Semiconductor Market Taxonomy

On the basis of product type, the global RF power semiconductor market is segmented into:
• RF Power Amplifiers 
• RF Passives 
• RF Duplexers 
• RF Switches 
• Other RF Devices

On the basis of frequency, the global RF power semiconductor market is segmented into:
• 60 GHz

On the basis of material, the global RF power semiconductor market is segmented into:
• Silicon
• Gallium Arsenide
• Silicon Germanium
• Gallium Nitride
• Silicon Carbide
• Indium Phosphide

On the basis of application, the global RF power semiconductor market is segmented into:
• Aerospace & Defense Application 
• Automotive Application 
• Medical Application 
• Consumer Application 
• Telecommunication and Data Communication 
• Other Applications

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This release was published on openPR.