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High-k and ALD/CVD Metal Precursors Market | Dynamic Network Factory Inc, Dow Chemical, NANMAT, JSR Corporation, Samsung Electronics, and Adeka Corporation
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Today, industry players are laying more emphasis on developing processes to form hybrid thin inorganic-organic films with the desired features to reduce production costs, thereby stimulating the demand for high-k and ALD/CVD metal precursor market. High popularity of trailing edge devices supporting internet of things (IoT) technology and consumer electronics sector growth, is expected to fuel the industry trends over the coming seven years.
Asia Pacific high-k and ALD/CVD metal precursor market growth is predicted to be driven by increasing demand for semiconductors across BRICS nations. Thailand, South Korea, and Taiwan are anticipated to offer lucrative growth avenues for the industry. In addition to this, low cost and portability of the precursors are expected to drive the regional growth over the coming seven years.
Key industry players include
1. The DOW Chemical Company
2. Air Liquide
3. Adeka Corporation
4. ATMI Incorporated
5. Air Products & Chemicals Incorporation
6. UP Chemical Company Limited
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Various technologies such as gates, capacitor, and interconnect are expected to influence high-k and ALD/CVD metal precursor market growth over the coming seven years. Interconnect technology, which had a considerable impact on the global high-k and ALD/CVD metal precursor market share in 2015, is expected to witness a significant growth over the period of 2016-2024. Gates technology based high-k and ALD/CVD metal precursor market, which was estimated at over USD 33 million in 2015, is forecast to grow considerably over the next few years, owing to high requirement for thermal and chemical stability.
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