What Challenges Global MOSFET and IGBT Gate Drivers Market May See In Upcoming Years?

MOSFET and IGBT are two switch mode power supply transistors. A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a field Effect Transistor that is typically formed by controlled oxidation of silicon. It uses insulated gates, which enabled changing conductivity with the variation of applied voltage as per application requirement. This property is used in amplifying or switching electric signals. An Insulated-gate Bipolar Transistor (IGBT) is a three terminal power semiconductor device, which is used as an electronic switch, consisting four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) structure without regenerative action.

It is essentially a MOSFET controlling a Bipolar Junction Power Transistor (BJT) with both transistors on a single piece of silicon. The IC gate drivers generate the necessary voltage and current level required to accurately and efficiently activate the power stage in industrial, consumer, computer and automotive applications, motor drives, uninterruptible power supplies (UPS), and solar inverters.

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The main key players in the industry are-
Infineon Technologies, ON Semiconductor, STMicroelectronics, ROHM Semiconductor, NXP Semiconductors, Texas Instruments, Microchip, Power Integrations Inc., Vishay, Broadcom, Analog Devices, IXYS, Toshiba, Renesas, and Powerex.

Can the country of specific interest be added?
Currently, the research report pays particular attention to the following regions:
North America (United States, Canada, Mexico), Europe (Germany, United Kingdom, France, Italy, Russia, Spain, etc.), South America (Brazil, Argentina, etc.) and Middle East and Africa (Saudi Arabia, South Africa, etc.)

Can we add or profile a new company according to our needs?
Yes, we can add or profile a new company according to customer needs in the report. Final confirmation should be provided by the research team depending on the difficulty of the investigation.

Increasing growth in the electronic devices industry is a major driving factor for growth of the global MOSFET and IGBT gate driver market:

IC drivers of MOSFET and IGBT are primarily used in electronic devices as a switch and also as amplifiers i.e. to change an ongoing process to a higher voltage. Increasing demand for electronic devices is one of the key driving factors for growth of the market. MOSFETs can operate at high frequencies and can perform fast switching applications with little turn-off losses. IGBT combines the simple gate-drive characteristics found in the MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor.

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Global MOSFET and IGBT Gate Driver Market: Regional Insight

Asia Pacific held the dominant position in the market for the MOSFET and IGBT gate Driver in 2017 and is projected to retain its dominance throughout the forecast period. This is due to high production of consumer electronics and appliances in the region, which is affecting the market growth. India, China, and Japan are some of the major emerging economies in the region with high production of electronic goods. Furthermore, high sales of electric vehicles in Asia Pacific have also accelerated growth of the market in this region.

North America held the second-largest share in 2017, owing to high growth of electronics market in this region. The U.S. and Canada are major growth engines in the region. The market for electronic goods and related trade has witnessed a significant increase in the recent past in the region. As MOSFET and IGBT gate are essential components in consumer appliances, demand for MOSFET and IGBT Gates, is expected to increase significantly with rise in demand for such products.

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