Technological Developments Silicon Carbide Market Growth during 2019 - 2025 | Key Players - AGSCO Corporation, Entegris Inc., Carborundum Universal Ltd., ESK-SIC GmbH, Grindwell Norton Ltd., Saint-Gobain Ceramics Materials GmbH, The Dow Chemical Company

The Global Silicon Carbide Market was valued at USD 235.82 million in 2016 and is projected to reach USD 1008.30 million by 2025, growing at a CAGR of 17.52% from 2017 to 2025.

Silicon carbide (SiC) is a semiconductor containing silicon and carbon with chemical formula SiC. It is a very hard, insoluble, crystalline compound used as an abrasive and heat-refractory material and in single crystals as semiconductors, especially in high-temperature applications. Benefits of Silicon carbide include - High hardness, Low thermal expansion, High thermal consistency, Good resistance at high temperatures, Electrical conductivity, and Non linear electrical resistance.

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Market Dynamics:

1. Market Drivers

1.1 High utilization of power semiconductor technology in renewable energy generation

1.2 Ability of SIC in semiconductor to perform at high temperature and high voltage & power

1.3 System size reduction by using SIC power devices

1.4 Application of SIC devices in RF and cellular base station

1.5 Growing demand for motor drives is lining SIC-based devices in positive growth trajectory

2. Market Restraints

2.1 Issues related with SIC power devices packaging

2.2 Gan is competing with SIC

Market Segmentation:

The Global Silicon Carbide Market is segmented on the basis of by wafer size, device, application, vertical, and region.

1. Wafer Size:

1.1 2 Inch

1.2 4 Inch

1.3 6-Inch and above

2. By Device:

2.1 SiC bare die

2.2 SIC discrete devices

3. By Application:

3.1 EV Motor Drive

3.2 EV Charging

3.3 Flexible AC Transmission Systems

3.4 High-Voltage

3.5 Direct Current

3.6 Electronic Combat System

3.7 Wind Energy

3.8 Solar Energy

3.9 RF Device and Cellular Base Station

3.10 Power Grid Device

3.11 Power Supply and Inverter

3.12 Lighting Control

3.13 Industrial Motor Drive

3.14 Flame Detector

3.15 Others

4. By Vertical:

4.1 Power Electronics

4.2 Telecommunications

4.3 Energy & Power

4.4 Renewable Power Generation

4.5 Defense

4.6 Automotive

4.7 Others

5. By Region:

5.1 North America (U.S., Canada, Mexico)

5.2 Europe (Germany, UK, France, Rest of Europe)

5.3 Asia Pacific (China, India, Japan, Rest of Asia Pacific)

5.4 Latin America (Brazil, Argentina, Rest of Latin America)

5.5 Middle East & Africa

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Competitive Landscape:

The major players in the market are as follows:

1. Cree Inc. (Wolfspeed)

2. Stmicroelectronics N.V.

3. On Semiconductor

4. United Silicon Carbide, Inc.

5. Renesas Electronics Corporation

6. Ascatron AB

7. Graphensic AB

8. Basic 3C, Inc.

9. Infineon Technologies AG

10. Rohm Semiconductor

11. Fuji Electric Co., Ltd.

12. General Electric

13. Genesic Semiconductor Inc.

14. Monolith Semiconductor Inc.

15. Pilegrowth Tech S.R.L.

These major players have adopted various organic as well as inorganic growth strategies such as mergers & acquisitions, new product launches, expansions, agreements, joint ventures, partnerships, and others to strengthen their position in this market.

RESEARCH METHODOLOGY OF VERIFIED MARKET RESEARCH:

Research study on the Global Silicon Carbide Market was performed in five phases which include Secondary research, Primary research, subject matter expert advice, quality check and final review.

The market data was analyzed and forecasted using market statistical and coherent models. Also market shares and key trends were taken into consideration while making the report. Apart from this, other data models include Vendor Positioning Grid, Market Time Line Analysis, Market Overview and Guide, Company Positioning Grid, Company Market Share Analysis, Standards of Measurement, Top to Bottom Analysis and Vendor Share Analysis.

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