MOSFET and IGBT Gate Drivers Market Top Keyplayers Infineon Technologies, ON Semiconductor, STMicroelectronics, ROHM Semiconductor, NXP Semiconductors

MOSFET and IGBT are two switch mode power supply transistors. A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a field Effect Transistor that is typically formed by controlled oxidation of silicon. It uses insulated gates, which enabled changing conductivity with the variation of applied voltage as per application requirement. This property is used in amplifying or switching electric signals. An Insulated-gate Bipolar Transistor (IGBT) is a three terminal power semiconductor device, which is used as an electronic switch, consisting four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) structure without regenerative action.

Download PDF Brochure of Research Report: https://www.coherentmarketinsights.com/insight/request-pdf/1838

Increasing growth in the electronic devices industry is a major driving factor for growth of the MOSFET and IGBT gates market

IC drivers of MOSFET and IGBT are primarily used in electronic devices as a switch and also as amplifiers i.e. to change an ongoing process to a higher voltage. Increasing demand for electronic devices is one of the key driving factors for growth of the market. For instance, according to 2015 report by Hong Kong Science and Technology Parks (HKSTP), the global consumer electronics market is projected to reach US$ 2,976 billion by 2020, with a CAGR of 15.4% in the forecast period (2015-2020). IGBT combines the simple gate-drive characteristics found in the MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor. IGBT gate are often used with amplifiers and to generate large power pulses, hence are useful in modern appliances such as electric cars, trains, variable-speed refrigerators, and air conditioners.

MOSFET and IGBT Gate Driver: Regional Insight

Asia Pacific held the dominant position in the market for the MOSFET and IGBT gate Driver in 2017 and is projected to retain its dominance throughout the forecast period. This is due to high production of consumer electronics and appliances in the region, which is affecting the market growth. India, China, and Japan are some of the major emerging economies in the region with high production of electronic goods. For instances, according to India Brand Equity Foundation (IBEF), May 2018, the India electronic market is expected to exhibit 41% CAGR in the forecast year (2017-2020) and is expected to reach US$ 400 Billion by 2020. This is expected to lead to high adoption of MOFSET and IGBT gate, thus aiding in growth of the market.

MOSFET and IGBT Gate Driver: Competitive Landscape

Key players operating in the global MOSFET and IGBT gate drivers market are Infineon Technologies, ON Semiconductor, STMicroelectronics, ROHM Semiconductor, NXP Semiconductors, Texas Instruments, Microchip, Power Integrations Inc., Vishay, Broadcom, Analog Devices, IXYS, Toshiba, Renesas, and Powerex.

Request for Customization of Research Report: https://www.coherentmarketinsights.com/insight/request-customization/1838

MOSFET and IGBT Gate Driver: Taxonomy

By Product Type
• Single Channel Gate Drivers
• Half Bridge Gate Drivers
• Full Bridge Gate Drivers
• Three Phase Gate Drivers
• Other

By Application:
• Home Appliance
• Automotive
• Display & Lighting
• Power Supply
• Others

By Region:
• North America
• Europe
• Asia Pacific
• Latin America
• The Middle East
• Africa

Coherent Market Insights is a prominent market research and consulting firm offering action-ready syndicated research reports, custom market analysis, consulting services, and competitive analysis through various recommendations related to emerging market trends, technologies, and potential absolute dollar opportunity.

Mr. Shah
Coherent Market Insights
1001 4th Ave,
#3200
Seattle, WA 98154
Tel: +1-206-701-6702
Email: sales@coherentmarketinsights.com

This release was published on openPR.