At 32.8% CAGR SiC & GaN Power Devices Market Size will reach 1780 Million USD by 2024 - by Top Key Players: Infineon, Rohm, Mitsubishi, STMicro, Fuji, Toshiba, Microsemi, United Silicon Carbide Inc., GeneSic, Efficient Power Conversion (EPC), GaN Systems,

A detailed study on SiC & GaN Power Devices Market formulated by Market Study Report, LLC, puts together a concise analysis of the growth factors impacting the current business scenario across assorted regions. Significant information pertaining to the industry’s size, share, application, and statistics are also summed in the report in order to present an ensemble prediction. In addition, this report undertakes an accurate competitive analysis illustrating the status of market majors in the projection timeline, while including their expansion strategies and portfolio.

According to this study, over the next five years the SiC & GaN Power Devices market will register a 32.8% CAGR in terms of revenue, the global market size will reach US$ 1780 million by 2024, from US$ 320 million in 2019. In particular, this report presents the global market share (sales and revenue) of key companies in SiC & GaN Power Devices business,

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The key manufacturers covered in this report:

• Infineon
• Rohm
• Mitsubishi
• STMicro
• Fuji
• Toshiba
• Microsemi
• United Silicon Carbide Inc.
• GeneSic
• Efficient Power Conversion (EPC)
• GaN Systems
• VisIC Technologies LTD

Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors. Silicon Carbide (SiC) and gallium nitride (GaN) Power Devices are the mainly used Wide-bandgap semiconductors materials.
Infineon is the largest production Cmpany for SiC & GaN Power Devices, with a production value market share nearly 49.01% in 2016.

SiC & GaN Power Devices used in industry including Consumer Electronics, Automotive & Transportation, Industrial Use and Others. Report data showed that 34.05% of the SiC & GaN Power Devices market demand in Industrial Use, 28.76% in Consumer Electronics in 2016.
There are two kinds of SiC & GaN Power Devices, which are SiC and GaN Power Devices. SiC Power Devices is important in the SiC & GaN Power Devices, with a production revenue market share nearly 91.40% in 2016.

Briefly speaking, in the next few years, SiC & GaN Power Devices industry will be a rapid development industry. Sales of SiC & GaN Power Devices have brought a lot of opportunities, there will more companies enter into this industry, especially in developing countries.

This report presents a comprehensive overview, market shares, and growth opportunities of SiC & GaN Power Devices market by product type, application, key manufacturers and key regions and countries.

This study considers the SiC & GaN Power Devices value and volume generated from the sales of the following segments:

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Segmentation by product type:

GaN
SiC

Segmentation by application:

Consumer Electronics
Automotive & Transportation
Industrial Use
Others

The report also presents the market competition landscape and a corresponding detailed analysis of the major vendor/manufacturers in the market.

In addition, this report discusses the key drivers influencing market growth, opportunities, the challenges and the risks faced by key manufacturers and the market as a whole. It also analyzes key emerging trends and their impact on present and future development.

Research objectives

To study and analyze the global SiC & GaN Power Devices consumption (value & volume) by key regions/countries, product type and application, history data from 2014 to 2018, and forecast to 2024.

To understand the structure of SiC & GaN Power Devices market by identifying its various subsegments.

Focuses on the key global SiC & GaN Power Devices manufacturers, to define, describe and analyze the sales volume, value, market share, market competition landscape, SWOT analysis and development plans in next few years.

To analyze the SiC & GaN Power Devices with respect to individual growth trends, future prospects, and their contribution to the total market.

To share detailed information about the key factors influencing the growth of the market (growth potential, opportunities, drivers, industry-specific challenges and risks).

To project the consumption of SiC & GaN Power Devices submarkets, with respect to key regions (along with their respective key countries).

To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.

To strategically profile the key players and comprehensively analyze their growth strategies.

Table of Contents
2019-2024 Global SiC & GaN Power Devices Consumption Market Report

1 Scope of the Report

2 Executive Summary

3 Global SiC & GaN Power Devices by Players

4 SiC & GaN Power Devices by Regions

5 Americas

6 APAC

7 Europe

8 Middle East & Africa

9 Market Drivers, Challenges and Trends

10 Marketing, Distributors and Customer

11 Global SiC & GaN Power Devices Market Forecast

12 Key Players Analysis

13 Research Findings and Conclusion

Complete report at https://www.marketstudyreport.com/reports/global-sic-gan-power-devices-market-growth-2019-2024?utm_source=openpr.com&utm_medium=Abhijeet

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