MOSFET and IGBT Gate Drivers Market Will Touch New Level in Upcoming Year Infineon Technologies, ON Semiconductor, STMicroelectronics, ROHM Semiconductor, NXP Semiconductors, Texas Instruments, Microchip

MOSFET and IGBT are two switch mode power supply transistors. A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a field Effect Transistor that is typically formed by controlled oxidation of silicon. It uses insulated gates, which enabled changing conductivity with the variation of applied voltage as per application requirement. This property is used in amplifying or switching electric signals.

An Insulated-gate Bipolar Transistor (IGBT) is a three terminal power semiconductor device, which is used as an electronic switch, consisting four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) structure without regenerative action. It is essentially a MOSFET controlling a Bipolar Junction Power Transistor (BJT) with both transistors on a single piece of silicon. The IC gate drivers generate the necessary voltage and current level required to accurately and efficiently activate the power stage in industrial, consumer, computer and automotive applications, motor drives, uninterruptible power supplies (UPS), and solar inverters.

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Increasing growth in the electronic devices industry is a major driving factor for growth of the MOSFET and IGBT gates market

IC drivers of MOSFET and IGBT are primarily used in electronic devices as a switch and also as amplifiers i.e. to change an ongoing process to a higher voltage. Increasing demand for electronic devices is one of the key driving factors for growth of the market. For instance, according to 2015 report by Hong Kong Science and Technology Parks (HKSTP), the global consumer electronics market is projected to reach US$ 2,976 billion by 2020, with a CAGR of 15.4% in the forecast period (2015-2020).

MOSFET and IGBT Gate Driver: Regional Insight

The market for MOSFET and IGBT Gate on the basis of region is segmented into six regions namely, North America, Europe, Asia Pacific, Latin America, The Middle East, and Africa.

Asia Pacific held the dominant position in the market for the MOSFET and IGBT gate Driver in 2017 and is projected to retain its dominance throughout the forecast period. This is due to high production of consumer electronics and appliances in the region, which is affecting the market growth. India, China, and Japan are some of the major emerging economies in the region with high production of electronic goods. For instances, according to India Brand Equity Foundation (IBEF), May 2018, the India electronic market is expected to exhibit 41% CAGR in the forecast year (2017-2020) and is expected to reach US$ 400 Billion by 2020. This is expected to lead to high adoption of MOFSET and IGBT gate, thus aiding in growth of the market.

MOSFET and IGBT Gate Driver: Competitive Landscape

Key players operating in the global MOSFET and IGBT gate drivers market are Infineon Technologies, ON Semiconductor, STMicroelectronics, ROHM Semiconductor, NXP Semiconductors, Texas Instruments, Microchip, Power Integrations Inc., Vishay, Broadcom, Analog Devices, IXYS, Toshiba, Renesas, and Powerex.

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This release was published on openPR.