3D NAND Flash Memory Market to Reach $99,769.0 Million by 2025 | Top Key Players are Apple, Lenovo, SanDisk, Samsung Electronics, Toshiba and Intel Corporation, SK Hynix Semiconductor, Micron Technology, Advanced Micro Devices

“3D NAND Flash Memory Market by Type, Application, and End User: Global Opportunity Analysis and Industry Forecast, 2017 - 2025,"the global 3D NAND flash memory market was valued at $9,056.2 million in 2017 and is projected to reach $99,769.0 million by 2025, growing at a CAGR of 35.3% from 2018 to 2025.

The increase in demand for data storage across consumer electronics and enterprise storage sectors fuel the growth of the global 3D NAND flash memory market. Moreover, the growth in requirement of small-form factor has increased the scope for R&D for such memory devices. Technological advancements by the emerging economies boost the memory market growth. The ambitious project of 100 smart cities in India is projected to increase the adoption of smarter solutions for storage, since the project is based on the concept of using sensors and wireless technology to establish a wide connectivity network, thus generating large volume of data requiring a reliable and robust storage solution. The 3D NAND has high density and capacity with compact packaging and offers improved performance, thus is a suitable choice for memory storage.

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The Asia-Pacific embedded 3D NAND flash memory market is largely controlled by government policies that are encouraging sustainable manufacturing and investments in the sector. Moreover, the increase in demand for lightweight memory design and high durability has enhanced the adoption of 3D NAND flash memory systems in enterprise storage and automotive industries, thereby providing lucrative opportunities for the market growth. Furthermore, increased adoption of smart technologies in Asia-Pacific is anticipated to provide lucrative opportunities for the growth of the global market.

Over the past few years, the demand for smaller memory chips had propelled due to advancement in electronics and products. However, reducing the chip size or the device dimensions any further had become very difficult as it was two-dimensional. To manage the space constraints and the aforementioned issues, the memory cells of 3D NAND flash memory technology are stacked in vertical layers, leading to increased transistor density per area while not expanding the chip diameter. This is validated by Moore’s law that states the number of transistors on the densely integrated circuit doubles every two years. Moreover, with the technological advancements, increase in demand for storage space in much smaller chips by various smart devices is expected to be the major driver for the global market.

Key Findings of the 3D NAND Flash Memory Market:
•In 2017, the smartphone & tablets sub-segment generated the highest revenue in the global 3D NAND flash memory market.
•In 2017, the Consumer electronics segment generated the highest revenue among the other end user types in the global 3D NAND flash memory market.

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KEY PLAYERS
•Samsung Electronics Co. Ltd.
•Toshiba Corporation
•SK Hynix Semiconductor Inc.
•Micron Technology Inc.
•Intel Corporation
•Apple Inc
•Lenovo Group Ltd
•Advanced Micro Devices
•STMicroelectronics
•SanDisk Corporation

These key players have adopted strategies such as product portfolio expansion, mergers & acquisitions, agreements, geographical expansion, and collaborations to enhance their market penetration.

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