IGCT Market to Reach $17.77 million, Globally, By Top Key Players: ABB, Infineon Technologies, Mitsubishi Electric, Tianjin Century Electronics, CSR Zhuzhou Institute Co, Ltd. (CRRC), General Electric, Xiamen Hidins Technology Co. Ltd, Jiangyin City Saiyi

In 2017, the asymmetric IGCTs segment dominated the global IGCT market based on type, in terms of revenue. Furthermore, based on application, the drive segment contributed to major revenue share of the global IGCT market, followed by traction in 2017. Due to lower conduction loss, transition between on & off state enables short pulse, which adds fast switching frequency needed for reliable operation. IGCTs having inbuilt turn-on protective network, which limit the rate of current rise compared to GTO & IGBT, which makes them more powerful, efficient, and attractive as well.

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In 2017, the asymmetric IGCTs segment dominated the global IGCT market based on type, in terms of revenue. Furthermore, based on application, the drive segment contributed to major revenue share of the global IGCT market, followed by traction in 2017. Due to lower conduction loss, transition between on & off state enables short pulse, which adds fast switching frequency needed for reliable operation. IGCTs having inbuilt turn-on protective network, which limit the rate of current rise compared to GTO & IGBT, which makes them more powerful, efficient, and attractive as well.

Lower conduction loss in comparison to GTO & IGBT, rise in usage of power electronics in the renewable energy sources, low cost, and outstanding performance at high temperature offered by IGCT would drive the market. Moreover, usage of power semiconductor devices in hybrid vehicles and advent of high-power technology (HPT) platforms would supplement the growth of the market. However, heavy thyristor structure and intricate manufacturing process would restrain the growth of the market.

An IGCT is a gate-controlled turn-off switch which conducts like a thyristor with lowest conduction losses. It was originally jointly developed by ABB and Mitsubishi. Major application of IGCT is in industrial drives in sectors, which require multi-megawatt electric motors that power the large industrial loads in mines, power stations, and metal processing plants. Other industries include oil & gas, water & wastewater, power generation & rubber, and tire industries.

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The key players profiled in the report are ABB, Infineon Technologies, Mitsubishi Electric, Tianjin Century Electronics, CSR Zhuzhou Institute Co, Ltd. (CRRC), General Electric, Xiamen Hidins Technology Co. Ltd, Jiangyin City Saiying Electron Co. Ltd., AmePower, Inc., and Shenzhen CTW Semiconductor Co., Ltd.

Key Findings of the IGCT Market:

• The type segment generated the highest revenue in the global IGCT market in 2017.
• In 2017, the asymmetric IGCT segment contributed to the highest revenue in the type segment.
• LAMEA is anticipated to exhibit the highest CAGR during the forecast period.
• In 2017, Asia Pacific contributed the highest market share, followed by, Europe, Asia-Pacific, and LAMEA.

Analyst Review:

Integrated Gate Commutated Thyristor (IGCT) is a power semiconductor, which can be used for medium to high-voltage applications ranging from 0.5 MVA up to several 100 MVA. At present, there is an increase in demand for the IGCT devices from the developed countries such as the U.S, Canada, and others. Companies in this industry adopt various techniques to provide customers with advanced and innovative product offerings.

Benefits such as better performance of IGCT at higher temperature (temperature ranges from -40 to 125 °C) support the growth of the market. IGCT is used in industrial appliances and steel mills to control high power AC motors and AC grid interface, as well as the PWM switching. Therefore, this feature adds value to drive the IGCT market.

However, bulky structure of the thyristor and complex manufacturing process impede the growth of the market. In future, rise in use of power semiconductor devices in hybrid vehicles, and invention of high-power technology (HPT) platform are expected to create lucrative opportunities for the key players operating in the IGCT market.

Among the analyzed geographical regions, Asia-Pacific is expected to account for the highest revenue in the global market throughout the forecast period (2018-2024) followed by North America, Europe, and LAMEA. However, LAMEA is projected to grow at a higher CAGR, predicting a lucrative market growth for IGCT devices.

ABB, Infineon Technologies, Mitsubishi Electric, Tianjin Century Electronics, CSR Zhuzhou Institute Co, Ltd. (CRRC), General Electric, Xiamen Hidins Technology Co. Ltd., Jiangyin City Saiying Electron Co. Ltd., AmePower, Inc., and Shenzhen CTW Semiconductor Co., Ltd are the key market players that occupy a significant revenue share in the IGCT market.

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