High-k and ALD/CVD Metal Precursor Market Trends to 2024 Major Players are Air Liquide, Air Products, Praxair, Inc, The Dow Chemical Company, The Linde Group, REC, Samsung Electronics

Global high-k and ALD/CVD metal precursor market is characterized by notable number of players offering diverse and cost-effective solutions. Ongoing need to develop processes to form thin film with desired properties for various applications will drive demand over the forecast timeline.

Major industry players are Adeka Corporation, AFC Hitech, AG Semiconductor Devices, Air Liquide, Air Products and Chemicals, Colnatec, Praxair, Dynamic Network Factory Inc., DNF, Dow Chemical, JSR Corporation, Linde, NANMAT, OCI Materials, REC, Samsung Electronics, Soulbrain, Strem Chemicals Inc., Tri Chemical Laboratories Inc., Union Pacific Chemicals.

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Industry News: -
The U.S., Japan, and the European Union have invested USD 3.7 billion, USD 750 million and USD 1.2 billion respectively, in the National Nanotechnology Initiative.The display industry creates a high added value of downstream industries along with acting as a home for strong upstream companies and industrial foundation comprising LG and Samsung. The latter has incorporated chip-on-board (COB) enveloped LEDs for offering developers of solid-state lighting better options in terms of color quality and optical control. The U.S. Navy has financed the electronic circuit miniaturization to produce the guidance computers for its Polaris missiles.

Regulatory policies and initiatives undertaken by the government for the manufacturing of semiconductor devices will give impetus to high-k and ALD/CVD metal precursor market share. The industry participants are focused on optical, dielectric and chemical properties of the hybrid organic-inorganic films to reduce manufacturing costs. Furthermore, increasing IPR protection measures will have an emphasizing role in chemical designs with rising IPR filings on precursor material compositions.

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The optical, mechanical, dielectric, chemical and conductive properties of the hybrid organic-inorganic films are projected to boost the high k metal precursors market share over the forecast timeframe. Escalating demand for various thin film materials in new industrial applications will lead towards technological advancement and innovation. High risk of impurity levels may challenge high-k and ALD/CVD metal precursor market size from 2016 to 2024.

Growth drivers
1. Rising demand for sophisticated products
2. Superior customer service

High-k and ALD/CVD Metal Precursor Technology Analysis (Revenue, USD Million, 2013 – 2024)

• Memory/Capacitor
• Interconnect
• Gates

Various technologies such as gates, capacitor, and interconnect are expected to influence high-k and ALD/CVD metal precursor industry growth over the coming seven years. Interconnect technology, which had a considerable impact on the global high-k and ALD/CVD metal precursor industry share in 2015, is expected to witness a significant growth over the period of 2016-2024. Gates technology based high-k and ALD/CVD metal precursor market, which was estimated at over USD 33 million in 2015, is forecast to grow considerably over the next few years, owing to high requirement for thermal and chemical stability.

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U.S. high-k and ALD/CVD metal precursor market size exceeded USD 30 million in 2015. Complexity of semiconductor manufacturing coupled with transition and scaling to 450 mm wafers processing will favor U.S. microelectronics and nanotechnology. China high-k and ALD/CVD metal precursor market share accounted for more than 35% of the overall Asia Pacific industry 2015. Growth across the region can be credited to increasing end-use electronic product demand. Taiwan is projected to have the largest consumer base of semiconductor materials due to large foundry of chip makers and advanced packaging.

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