High-k and ALD/CVD Metal Precursors Market significant CAGR during 2017-2025 : Dow Chemical, NANMAT, JSR Corporation, Samsung Electronics, and Adeka Corporation

A recent market study by TMR Research, titled, “High-k and ALD/CVD Metal Precursors Market – Global Industry Analysis, Size, Share, Trends, Analysis, Growth, and Forecast 2017–2025,” states chemical vapor deposition (CVD) processes are gaining traction due to weaker performance and unreliability of the traditionally used SiO2 gate dielectrics.

CVDs are thin film deposition methodologies used in manufacturing of semiconductor devices. In the recent past, high-k and ALD/CVD metal precursors have found increased application in producing memory devices and high-dielectric metal gates that are used in cutting-edge logic devices. ALD/CVD are also seeing high uptake in the civil and defense sectors for myriad cross-platform applications. The ALD/CVD method is finding growing application in making components of non-volatile memories, organic thin film transistors, capacitors dielectrics, and DRAM which is acronym for dynamic random-access memory.

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The demand for high-k and ALD/CVD metal precursors is being stoked by pressing requirement of miniaturization and better performance of an array of semiconductor and electronics devices. The process of ALD/CVD is most suited for metals, namely platinum, rhodium, and palladium. Tantalum and germanium metals are also being tested for their usefulness in the process.

The reduced thermal stability of compounds called metal-organic frameworks is also forecasted to stoke growth in the high-k and ALD/CVD metal precursors market in the near future. Further, surging demand for superior IC device structures for manufacture of semiconductors will unravel new opportunities for the market to grow too.

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Vis-à-vis precursor technology, the segment of interconnects is seeing maximum demand in the global market for high-k and ALD/CVD metal precursor. High-k precursors are being used extensively in producing metal gates for logic devices. A major stumbling block for companies operating in the highly competitive market for high-k and ALD/CVD metal precursors is the fact that only a few metals such as palladium, platinum, and rhodium, can be used for atomic layer deposition. Application of such rare metals which are extremely expensive, drives up the price of the process of thin film deposition, thereby squeezing margins for players.

Geographically, Asia Pacific currently leads the global market for high-k and ALD/CVD metal precursors with a substantial margin. The region is expected to hold on to its dominant position in the next couple of years too mainly because of the robust electronics industry in China and Japan. Pressing demand for miniaturized semiconductor devices in the region is also expected to benefit sales of high-k and ALD/CVD metal precursors. Vis-à-vis revenue, Asia Pacific comes in a second position after North America. Soaring demand for more advanced electronic devices in the region owing to the increased capacity of the people to splurge will continue significantly driving the market in the region in the near term, predict our in-house analysts.

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Samsung Electronics, Dynamic Network Factory Inc, NANMAT, Dow Chemical, JSR Corporation, and Adeka Corporation are to name a few of the prominent participants in the market for high-k and ALD/CVD metal precursors.

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This release was published on openPR.