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Gallium Nitride (GaN) Semiconductor Device Market Outlook to 2023 – Corning Inc., Duran Group, Gerresheimer AG, Sartorius AG, Thermo Fisher Scientific, Mettler Toledo International, Inc., Eppendorf AG, Bellco Glass, Inc., Crystalgen Inc., Technosklo Ltd

10-11-2018 07:35 AM CET | IT, New Media & Software

Press release from: Research Reports Inc.

Gallium Nitride (GaN) Semiconductor Device Market

Gallium Nitride (GaN) Semiconductor Device Market

Oct 2018, New York USA (News)- Global Gallium Nitride Semiconductor Device Market to reach USD 29.2 billion by 2025.
Global Gallium Nitride (GaN) Semiconductor Device Market valued approximately USD 17.01 billion in 2016 is anticipated to grow with a healthy growth rate of more than 6.2% over the forecast period 2017-2025. Increasing use of Laptops, TVs and mobile phones and other gadgets, growing need of low power consuming electronic appliances, demand for radio frequency in power electronics, energy efficiency in consumer goods, rising use of electric vehicle are the major factors which are driving the Global Gallium Nitride (GaN) Semiconductor Device Market. The Gallium Nitrite is basically a semiconductor that is used in the manufacturing of light-emitting diodes (LEDs), power devices and high radio frequency devices. A Gallium Nitride semiconductor has several benefits over silicon-based devices such as its operating temperature is very high, low resistance, high breakdown voltage and high-speed switching capacity that makes it a good alternative to silicon technology.

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Major Market Players
The industry is seeming to be fairly competitive. Some of the leading market players include Cree, Samsung, Infineon, Qorvo, MACOM, Microsemi Corporation, Analog Devices, Mitsubishi Electric, Efficient Power Conversion, GaN Systems, Exagan, VisIC Technologies, Integra Technologies, Transphorm, Navitas Semiconductor, Nichia, Panasonic, Texas Instruments, Ampleon, Sumitomo Electric, Northrop Grumman Corporation, Dialog Semiconductor, Epistar, RF Micro Devices Corporation, Osram Opto-semiconductors, Aixtron SE, Gallia Semiconductor, ROHM Company Limited and so on. Acquisitions and effective mergers are some of the strategies adopted by the key manufacturers. New product launches and continuous technological innovations are the key strategies adopted by the major players.
By Device Type:
Opto
Power
RF
By Wafer Size:
2 – Inch
4 – Inch
6 – Inch and above

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The regional analysis of Global Gallium Nitride (GaN) Semiconductor Device Market is considered for the key regions such as Asia Pacific, North America, Europe, Latin America and Rest of the World. North America is the leading/significant region across the world in terms of market share. Whereas, owing to the countries such as China, Japan, and India, Asia Pacific region is anticipated to exhibit higher growth rate / CAGR over the forecast period 2018-2025.
The objective of the study is to define market sizes of different segments & countries in recent years and to forecast the values to the coming eight years. The report is designed to incorporate both qualitative and quantitative aspects of the industry within each of the regions and countries involved in the study. Furthermore, the report also caters the detailed information about the crucial aspects such as driving factors & challenges which will define the future growth of the market. Additionally, the report shall also incorporate available opportunities in micro markets for stakeholders to invest along with the detailed analysis of competitive landscape and product offerings of key players.

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The regional analysis of Global Gallium Nitride (GaN) Semiconductor Device Market is considered for the key regions such as Asia Pacific, North America, Europe, Latin America and Rest of the World. North America is the leading/significant region across the world in terms of market share. Whereas, owing to the countries such as China, Japan, and India, Asia Pacific region is anticipated to exhibit higher growth rate / CAGR over the forecast period 2018-2025.

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