Mitsubishi Electric India introduces New Power Semi Conductor

The Indian government has ambitious plans to shift on a mass scale to electric vehicles (EVs)
by 2030. The plans are opulent and certainly hold several paybacks for environment
conservation.

While the transformative thrust for electric vehicles is a very positive move for India and the
world, it presents myriad opportunities as well as challenges.

Mitsubishi Electric has already taken a step towards making the idea of mass scale
shifting to electric vehicles a reality. The company recently launched a new J-Series
transfer molded power semiconductor module (T-PM) mainly for motor drive applications
in electric and hybrid vehicles. It is known that automotive components must especially
meet stringent safety standards, which creates demands for power semiconductor
modules that provide greater reliability than modules for industrial equipment. Mitsubishi
Electric pioneered the mass production of power semiconductor modules for hybrid vehicles
in 1997.

The company’s new module is expected to contribute to further compactness, weight
reduction and reduced power consumption in inverters for electric and hybrid vehicles. It
has some cutting-edge features like reduced inverter size and weight achieved through
the extra compact package with high integration. The compact power semiconductor
module features a highly integrated sixth-generation IGBT with a carrier-stored trench-
gate bipolar transistor (CSTBTTM) structure and high-thermal conductivity isolation sheet
in a transfer molded package. It realises compact EV/HEV inverter designs by achieving
36% smaller footprint and 42% lighter weight compared with the existing J-Series
CT300DJH060 automotive power semiconductor module.

Another important feature is inverter power-loss reduction supported by low-loss power
semiconductor chips. It realises low power-loss EV/HEV inverter designs through the
utilization of sixth-generation IGBTachieving 12% lower collector-emitter saturation
voltage compared with the existing J-Series.

The new module is automotive-grade high quality and features transfer molded structure
and Mitsubishi Electric’s original Direct Lead Bonding (DLB) structure. Its power-cycle and
temperature-cycle life spans are 30 times longer than those of typical industrial
powersemiconductor modules. The power-cycle lifespan is based on repetitive
operational tests with the chip energised and the temperature rapidly changed within a
range of 50°C and 100°C. The temperature cyclelifespan is based on repetitive operational
tests with the temperature modulated between -40°C and 125°C without the chip being
energised. The new module is completely lead-free, including its terminal plating.

Mitsubishi Electric Corporation is a Japanese multinational electronics and electrical equipment manufacturing company headquartered in Tokyo, Japan. It is one of the core companies of Mitsubishi.

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This release was published on openPR.