SiC & GaN Power Devices Market Outlook with Company Profiles – Infineon, Rohm, Mitsubishi, STMicro, Fuji, Toshiba, Microsemi, United Silicon Carbide Inc., GeneSic, Efficient Power Conversion (EPC), GaN Systems and More

Over the next five years, the research study projects that SiC & GaN Power Devices Market will register a 32.8% CAGR in terms of revenue, reach US$ 1780 million by 2023, from US$ 320 million in 2017.

Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors. Silicon Carbide (SiC) and gallium nitride (GaN) Power Devices are the mainly used Wide-bandgap semiconductors materials.

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Infineon is the largest production Cmpany for SiC & GaN Power Devices, with a production value market share nearly 49.01% in 2016.

SiC & GaN Power Devices used in industry including Consumer Electronics, Automotive & Transportation, Industrial Use and Others. Report data showed that 34.05% of the SiC & GaN Power Devices market demand in Industrial Use, 28.76% in Consumer Electronics in 2016.

There are two kinds of SiC & GaN Power Devices, which are SiC and GaN Power Devices. SiC Power Devices is important in the SiC & GaN Power Devices, with a production revenue market share nearly 91.40% in 2016.

Briefly speaking, in the next few years, SiC & GaN Power Devices industry will be a rapid development industry. Sales of SiC & GaN Power Devices have brought a lot of opportunities, there will more companies enter into this industry, especially in developing countries.

This report presents a comprehensive overview, market shares, and growth opportunities of SiC & GaN Power Devices market by product type, application, key manufacturers and key regions.

To calculate the market size, the research study considers value and volume generated from the sales of the following segments. The segmentation by product type are GaN and SiC. Also, the segmentation by application are Consumer Electronics, Automotive & Transportation, Industrial Use and others.

The report also presents the market competition landscape and a corresponding detailed analysis of the major vendor/manufacturers in the market. The key manufacturers covered in this report such as Infineon, Rohm, Mitsubishi, STMicro, Fuji, Toshiba, Microsemi, United Silicon Carbide Inc., GeneSic, Efficient Power Conversion (EPC), GaN Systems and VisIC Technologies LTD.

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In addition, this report discusses the key drivers influencing market growth, opportunities, the challenges and the risks faced by key manufacturers and the market as a whole. It also analyzes key emerging trends and their impact on present and future development.

Related Report:

Global WBG Power Devices Market 2018 by Manufacturers, Regions, Type and Application, Forecast to 2023

The worldwide market for WBG Power Devices is expected to grow at a CAGR of roughly 33.4% over the next five years, will reach 1820 million US$ in 2023, from 320 million US$ in 2017, according to a new study.

Market Segment by Manufacturers, this report covers Infineon, Rohm, Mitsubishi, STMicro, Fuji, Toshiba, Microsemi, United Silicon Carbide Inc., GeneSic, Efficient Power Conversion (EPC) and GaN Systems.

Read More: https://www.researchbeam.com/global-wbg-power-devices-2018-by-manufacturers-regions-type-and-application-forecast-to-2023-market?utm_source=RR-OPR&utm_medium=CC

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