Press release
Future of Gallium Nitride (GaN) Power Devices Size 2022 Transphorm Inc, Fujitsu Limited, NXP Semiconductors N.V.,GaN Systems Inc, Texas Instruments.
MarketStudyReport.com Add New Global Luffing Jib Tower Crane Market by Manufacturers, Countries, Type and Application, Forecast to 2022 to its research database. The report presents a deep study of the market growth factors and drivers. The report spread across 106 pages with table and figures in it.In this report, the global Gallium Nitride (GaN) Power Devices market is valued at USD 2.60 Billion in 2016 and is expected to reach USD 2.60 Billion by the end of 2022, growing at a CAGR of 24% between 2016 and 2022. This is attributed to its ability to minimize power loss and achieve high-speed switching with characteristics such as miniaturization, high breakdown voltage, and high-speed switching. Also, the large total addressable market such as power distribution systems, industrial systems, heavy electrical systems, turbines, heavy machinery, advanced industrial control systems, and electromechanical computing/computer systems.
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The competitive landscape of the Gallium Nitride (GaN) Power Devices market profiles the key players participating in the global business space. These include Transphorm Inc, Fujitsu Limited, NXP Semiconductors N.V., GaN Systems Inc, Texas Instruments, Infineon Technologies AG, Cree Incorporated (Wolfspeed), OSRAM Opto Semiconductors GmbH, Qorvo, Inc. The report also details the market positioning, strategies, and revenue procured by each of these manufacturers.
The industry is analyzed in terms of products, applications, regions, and the key manufacturers holding a prominent share of the global revenue.
The product landscape of the Gallium Nitride (GaN) Power Devices market comprises GaN Power Discrete Devices, GaN Power ICs, GaN Power Modules.
Each product has been analyzed in terms of its production, capacity, and consumption. The report further details the market share to be procured by each of these products over the coming years.
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In terms of end-user or applications, the report is segmented into Consumer Electronics, IT & Telecommunications, Automotive, Aerospace & Defense, Military, Others . A detailed analysis of the contribution of these application segments to the overall market revenue and volume has been included in the report.
The regional segmentation of the report includes United States, EU, China, Japan, South Korea, Taiwan. Detailing the consumption and production rate of Gallium Nitride (GaN) Power Devices in these regions, the report outlines the growth curve of this industry in terms of market volume and share over 2016-2022.
Major Points in Table of Contents
Global Gallium Nitride (GaN) Power Devices Market Research Report 2017
Global Gallium Nitride (GaN) Power Devices Market Overview
Global Gallium Nitride (GaN) Power Devices Market Competition by Manufacturers
Global Gallium Nitride (GaN) Power Devices Industry Capacity, Production, Revenue (Value) by Region
Global Gallium Nitride (GaN) Power Devices Industry Supply (Production), Consumption, Export, Import by Region
Global Gallium Nitride (GaN) Power Devices Market Production, Revenue (Value), Price Trend by Type
Global Gallium Nitride (GaN) Power Devices Market Analysis by Application
Global Gallium Nitride (GaN) Power Devices Industry Manufacturers Profiles/Analysis
Gallium Nitride (GaN) Power Devices Manufacturing Cost Analysis
Industrial Chain, Sourcing Strategy and Downstream Buyers
Marketing Strategy Analysis, Distributors/Traders
Market Effect Factors Analysis
Global Gallium Nitride (GaN) Power Devices Market Forecast
Research Findings and Conclusion
Appendix
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