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Don’t miss To Know the Future of Global Silicon Carbide Market – and Know about basic influencing factors
Don?t miss To Know the Future of Global Silicon Carbide Market ? and Know about basic influencing factors
Global Silicon Carbide (SiC) Market accounted for USD 257.7 million in 2016 growing at a CAGR of 18.5% during the forecast period of 2017 to 2024. The upcoming market report contains data for historic year 2014, 2015, the base year of calculation is 2016 and the forecast period is 2017 to 2024.
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Market Segmentation: Global Silicon Carbide Market
Global Silicon Carbide Market is segmented on the basis of Device, Application, Product, vertical and Geography.
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On the basis of device into SiC discrete devices, and SiC bare die
On the basis of product, SiC market is segmented into black, green, refractory, coated, metallurgical, metallurgical briquettes and micro grit.
On the basis of application, the SiC market is segmented into RF device and cellular base station, power grid device, flexible AC transmission systems (FACTS), high-voltage direct current (HVDC), power supply and inverter, lighting control, industrial motor drive, flame detector, EV, motor drive, EV charging, electronic combat system, wind energy, and solar energy.
On the basis of vertical, the SiC market is segmented into
telecommunications, energy & power, automotive, renewable power generation, defense, chemicals, fabrication, information and communication technology (ICT), electronics & semiconductors, medical & healthcare, and industrial sector.
On the basis of geography, silicon carbide market report covers data points for 28 countries across multiple geographies such as North America, South America, Europe, Asia-Pacific and Middle East & Africa. Some of the major countries covered in this report are U.S., Canada, Germany, France, U.K., Netherlands, Switzerland, Turkey, Russia, China, India, South Korea, Japan, Australia, Singapore, Saudi Arabia, South Africa, and Brazil among others. In 2017, North America is expected to dominate the market.
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Competitive Analysis: Global Silicon Carbide Market
The Global Silicon Carbide Market Report include detailed vendor level analysis for market shares in 2016 for Global, North America, Europe, Asia Pacific, Middle East and Africa and South America specifically. Also impact and development analysis of key vendors is registered in the market and factored on the basis of Vendor Positioning Grid Analysis which measures the vendors strengths and opportunities against present market challenges, measure providers ability to identify or satisfy present market needs, map providers market vision to current and upcoming market dynamics among others. The report also measures technology life line curve and market time line to analyze and do more affective investments.
Some of the Major players operating in the Market:
Some of the major players of the global silicon carbide market include AGSCO Corporation, Entegris Inc., ESD-SIC BV, ESK-SIC GmbH, Carborundum Universal Limited, Gaddis Inc., Grindwell Norton limited, Snam Abrasives, Saint-Gobain Ceramics Materials GmbH, Infineon Technologies AG, CREE Inc. (Wolfspeed), ROHM Semiconductor, STMicroelectronics N.V., ON Semiconductor, Toshiba Corporation, General Electric, Fuji Electric Co. Ltd, Renesas Electronics Corporation, GeneSiC Semiconductor Inc., Global Power Technologies Group, TanKeBlue Semiconductor Co. Ltd.,United Silicon Carbide, Inc., STMicroelectronics N.V., Rohm Semiconductor, Pilegrowth Tech S.R.L, Norstel AB, and others.
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