Performance Advantages of Gallium Nitride (GaN) for High Voltage Applications Override Cost Impediments

According to a new report by Transparency Market Research, the global gallium nitride (GaN) industrial devices market is considerably consolidated with top four players collectively accounting more than 85% of the market in 2014. These are International Rectifier Corporation, TriQuint Semiconductor Inc., Efficient Power Conversion Corporation, and NXP Semiconductors N.V.

“Expansion by means of outsourcing and development of sales sites at overseas locations is one of the key growth models that top vendors in this market are adopting,” says a TMR analyst. The aim is to develop cutting-edge technology with the objective to manufacture new products and offer high-performance functionality. A case in point in Fujitsu Limited. In January 2015, the company commenced the mass production of GaN power devices for switching applications in collaboration with Transphorm Inc. and Transphorm Japan Inc.

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Collaborations with entities across the entire power electronics market are key strategies for growth for top companies in the global GaN industrial devices market.

Expansion of distribution network to reach out to a diversified consumer base is also a key growth strategy that top companies in this market are focusing on.

Widespread Use of GaN-based Devices in Electronics Fuel Market Growth

A TMR analyst points out, “Introduction of advanced technology and increasing production volumes account for driving the global GaN industrial devices market from suppliers perspective. The growing demand for high power and high temperature applications has led to the rising utilization of GaN industrial devices. These devices are extensively used in radio frequency amplifiers, LEDs, and high voltage applications among others, as they can function at high temperature, high frequency, and high power density with improved efficiency and linearity.

The increasing number of applications of GaN-based devices is augmenting this market’s growth from a demand perspective. This is because gallium nitride presents better performance characteristics in comparison to other semiconductor devices such as gallium arsenide (GaAs) and Silicon (Si). Due to these features, GaN power semiconductors are suitable for high power applications such as power converter circuits and home appliances.

High Production Cost of Gallium Nitride Hinders Market Growth

“The high price factor of pure gallium nitride is impeding the growth of the global GaN industrial devices market,” points out a TMR analyst. The production cost of GaN is significantly higher in comparison to silicon carbide. The latter has been majorly used as a semiconductor substance for high voltage electronics for a decade. At present, there is no cost-effective technique for the production of high quality gallium nitride in large volumes. Issues pertaining to low raw material quality, low scalability, and high operating temperatures and pressures are reasons for the high cost production cost of GaN.

The global market for GaN industrial devices is anticipated to register a CAGR of 17.50% between 2015 and 2021 by volume. In terms of type, opto electronics led with almost 78% of the GaN industrial devices market in 2014. Wireless phone infrastructure: base stations (BTS) was the leading application segment in GaN high electron mobility transistor (HEMT) sub-segment.

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In 2014, the LED application segment led the market by both volume and value.

North America stood as the leading regional market for GaN industrial devices in 2014 due to the ceaseless demand for LEDs in computers, laptops, and gaming devices, and high utilization of GaN-based transistors in military applications.

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