SiC Junction Barrier Schottky (SiC JBS) Market Accelerates with Wide Bandgap Power Device Adoption | Valuates Reports

SiC Junction Barrier Schottky (SiC JBS) Market
The global market for SiC Junction Barrier Schottky (SiC JBS) was valued at US$ million in the year 2024 and is projected to reach a revised size of US$ million by 2031, growing at a CAGR of %during the forecast period.

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The SiC Junction Barrier Schottky (SiC JBS) Market is experiencing strong market growth driven by the increasing adoption of wide bandgap semiconductor technologies in high-efficiency power electronics. Silicon carbide (SiC) JBS diodes combine the low forward voltage of Schottky diodes with enhanced leakage current control, making them ideal for high-frequency, high-temperature, and high-voltage applications. As industries transition toward energy-efficient systems in renewable energy, electric vehicles, and industrial power supplies, the overall market size continues to expand, strengthening competitive market share among semiconductor manufacturers. Market trends highlight rising demand for higher voltage ratings and improved thermal performance.

By type, the 650V segment holds a significant market share, particularly in photovoltaic inverters, consumer power supplies, and industrial power conversion systems. These devices are widely adopted due to their balance between efficiency and cost-effectiveness. Meanwhile, the 1200V segment is witnessing faster market growth, driven by high-power applications such as EV onboard chargers, fast-charging infrastructure, and industrial motor drives. Increasing electrification and grid modernization efforts are expected to positively influence long-term market forecast and further expand market size for higher voltage SiC devices.

In terms of application, Photovoltaic Device applications account for a major market share, as SiC JBS diodes enhance inverter efficiency and reduce switching losses in solar energy systems. The broader Power segment-including EV powertrains, industrial drives, and data center power supplies-represents the fastest-growing contributor to market size. Other niche applications continue to support incremental market growth, reflecting evolving market trends in advanced power electronics.

Leading companies operating in this competitive landscape include STMicroelectronics, UnitedSiC, CALY Technologies, CR Micro, Yangzhou Yangjie Electronic, and Nanchang WeEn Semiconductors. These players compete through wafer fabrication capacity expansion, advanced epitaxial growth technologies, and integration of SiC devices into high-performance power modules to strengthen their market share.

Regionally, Asia-Pacific dominates production and consumption, particularly China, Japan, and South Korea, where renewable energy installations, EV manufacturing, and power electronics production are highly concentrated. Europe maintains strong market size supported by automotive electrification initiatives and renewable energy targets. North America demonstrates steady market growth driven by EV adoption and power infrastructure upgrades. Emerging regions such as Southeast Asia and Latin America are gradually increasing demand as solar energy deployment expands.

Looking ahead, the market forecast remains highly positive as global decarbonization policies, electrification trends, and energy efficiency standards continue to accelerate adoption of wide bandgap semiconductors. Ongoing advancements in SiC wafer quality, device reliability, and high-voltage performance are expected to drive sustained long-term market growth and evolving market trends worldwide.

by Type

• 650V
• 1200V

by Application

• Photovoltaic Device
• Power
• Others

By Company

STMicroelectronics, UnitedSiC, CALY Technologies, CR Micro, Yangzhou Yangjie Electronic, Nanchang WeEn Semiconductors

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