GaN on Si HEMT Epitaxial Wafer Market Set to Surge - Key Insights You Must Know

GaN on Si HEMT Epitaxial Wafer Market Size

The global market for GaN on Si HEMT Epitaxial Wafer was valued at US$ 73.1 million in the year 2024 and is projected to reach a revised size of US$ 291 million by 2031, growing at a CAGR of 22.1% during the forecast period.

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GaN on Si HEMT Epitaxial Wafer Market Size

The global market for GaN on Si HEMT Epitaxial Wafer was valued at US$ 73.1 million in the year 2024 and is projected to reach a revised size of US$ 291 million by 2031, growing at a CAGR of 22.1% during the forecast period.

Due to the use of Si substrate materials, GaN can be epitaxially grown on large-diameter silicon wafers and has the advantages of being compatible with traditional Si processes, making it an ideal choice for the development of power semiconductor technology. There are two types of GaN on Si HEMT epitaxy: normally-on, depletion-type (D-type) and normally-off, enhancement-type (E-type).

The main feature of GaN on Si is that Si is the substrate and GaN is the epitaxy. Silicon substrates are cheap, low in cost, can be produced on a large scale, have high energy density, and the size of the wafer can be made very large. Currently, the size of the wafer is 8 inches, but it is mainly 6 inches.

Report Scope

This report aims to provide a comprehensive presentation of the global market for GaN on Si HEMT Epitaxial Wafer, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding GaN on Si HEMT Epitaxial Wafer.

The GaN on Si HEMT Epitaxial Wafer market size, estimations, and forecasts are provided in terms of output/shipments (Pcs) and revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. This report segments the global GaN on Si HEMT Epitaxial Wafer market comprehensively. Regional market sizes, concerning products by Type, by Application, and by players, are also provided.

For a more in-depth understanding of the market, the report provides profiles of the competitive landscape, key competitors, and their respective market ranks. The report also discusses technological trends and new product developments.

The report will help the GaN on Si HEMT Epitaxial Wafer manufacturers, new entrants, and industry chain related companies in this market with information on the revenues, production, and average price for the overall market and the sub-segments across the different segments, by company, by Type, by Application, and by regions.

By Type
• 4 Inch
• 6 Inch

By Application
• GaN RF Devices
• GaN Power Devices

Key Companies
IQE, DOWA Electronics, CETC13, CETC55, Soitec (EpiGaN), NTT-AT, BTOZ, Episil-Precision Inc, Epistar Corp, Enkris Semiconductor Inc, Innoscience, Runxin Microelectronics, CorEnergy, Qingdao Cohenius Microelectronics, Shaanxi Yuteng Electronic Technology

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