SiC Schottky Barrier Diodes (SiC SBD) Market Share Accelerates with EV and Renewable Energy Expansion | Valuates Reports

SiC Schottky Barrier Diodes (SiC SBD) Market Size
The global market for SiC Schottky Barrier Diodes (SiC SBD) was valued at US$ 616 million in the year 2024 and is projected to reach a revised size of US$ 2872 million by 2031, growing at a CAGR of 25.0% during the forecast period.

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The SiC Schottky Barrier Diodes (SiC SBD) Market is witnessing rapid market growth as industries transition toward high-efficiency, high-voltage power electronics. Silicon Carbide (SiC) SBDs offer lower switching losses, higher thermal conductivity, and superior breakdown voltage compared to conventional silicon devices. These advantages make them critical for next-generation electric vehicles (EVs), renewable energy systems, fast charging infrastructure, and industrial automation. Rising electrification trends and decarbonization goals are significantly expanding overall market size and strengthening the long-term market forecast.

By type, 650V SiC SBD devices hold a strong market share in on-board chargers, power supplies, EV charging stations, and server power systems due to their efficiency in mid-voltage applications. 1200V SiC SBD represents a rapidly growing segment, driven by demand in high-voltage EV traction inverters, photovoltaic (PV) systems, energy storage converters, and industrial motor drives. These higher voltage devices are gaining market growth momentum as automotive OEMs and renewable energy integrators prioritize power density and efficiency improvements. Other voltage classes contribute incrementally to overall market size in specialized high-power industrial and rail applications.

In terms of application, Automotive & EV/HEV accounts for a dominant market share, supported by accelerating global EV adoption and stringent efficiency standards. EV Charging infrastructure is experiencing substantial market growth as governments and private players expand fast-charging networks worldwide. Industrial Motor/Drive and PV, Energy Storage, Wind Power segments contribute significantly to market size due to increasing renewable energy integration and factory automation upgrades. Additionally, UPS, Data Center & Server applications are emerging as high-growth segments, leveraging SiC SBDs to enhance energy efficiency and reduce operational costs. Rail Transport and other specialized sectors further support diversified market expansion.

Leading companies shaping the competitive landscape include STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, Microchip Technology, Fuji Electric, Navitas Semiconductor, Toshiba, Qorvo, San'an Optoelectronics, Littelfuse, WeEn Semiconductors, and Nexperia, among others. These companies maintain competitive market share through expanded SiC wafer capacity, vertical integration, automotive-grade certifications, and strategic partnerships with EV manufacturers and renewable energy firms.

Regionally, Asia-Pacific dominates production and consumption, led by China, Japan, and South Korea's advanced semiconductor manufacturing ecosystems. North America holds significant market size driven by EV innovation and SiC material development, particularly in the United States. Europe demonstrates strong market growth supported by automotive electrification initiatives and renewable energy deployment, especially in Germany and France. Emerging demand in Southeast Asia and Latin America further contributes to incremental global market expansion.

Overall, the SiC Schottky Barrier Diodes Market forecast remains highly positive, supported by accelerating EV penetration, renewable energy scaling, grid modernization, and ongoing advancements in wide bandgap semiconductor technology worldwide.

by Type

• 650V SiC SBD
• 1200V SiC SBD
• Others

by Application

• Automotive & EV/HEV
• EV Charging
• Industrial Motor/Drive
• PV, Energy Storage, Wind Power
• UPS, Data Center & Server
• Rail Transport
• Others

By Company

STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, Microchip (Microsemi), Fuji Electric, Navitas (GeneSiC), Toshiba, Qorvo (UnitedSiC), San'an Optoelectronics, Littelfuse (IXYS), CETC 55, WeEn Semiconductors, BASiC Semiconductor, SemiQ, Diodes Incorporated, KEC Corporation, PANJIT Group, Nexperia, Vishay Intertechnology, Zhuzhou CRRC Times Electric, China Resources Microelectronics Limited, Yangzhou Yangjie Electronic Technology, Changzhou Galaxy Century Microelectronics, Cissoid, SK powertech

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