Leading Companies Fueling Growth and Innovation in the Silicon Carbide Semiconductor Device Market

The silicon carbide semiconductor device market is positioned for remarkable expansion over the coming years, driven by several emerging technological trends and increasing demand across various sectors. This growth reflects the growing importance of silicon carbide in advancing high-performance, energy-efficient electronic components for cutting-edge applications such as electric vehicles and renewable energy systems.

Projected Market Size and Growth for Silicon Carbide Semiconductor Devices
The silicon carbide semiconductor device market is forecasted to reach a value of $6.16 billion by 2030, growing at an impressive compound annual growth rate (CAGR) of 20.4%. This rapid expansion is largely fueled by escalating demand for electric vehicle powertrains, the broadening use of renewable energy power conversion systems, and the need for semiconductors that perform reliably at high temperatures. Additionally, the rise of 5G and other high-frequency communication technologies, coupled with the growing adoption of wide-bandgap semiconductor technologies, are significant contributors to this market's growth. Key forecasted trends include the proliferation of power devices tailored for electric mobility, advancements in energy-efficient semiconductor manufacturing, integration of silicon carbide devices in autonomous systems, development of high-performance power electronics, and increasing use of smart manufacturing processes for silicon carbide components.

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Leading Companies Shaping the Silicon Carbide Semiconductor Device Sector
The silicon carbide semiconductor device industry features several dominant players, including Infineon Technologies, ROHM Co., Ltd., STMicroelectronics, Wolfspeed Inc., Mitsubishi Electric Corporation, Toshiba Electronic Devices & Storage, onsemi, Microchip Technology / Microsemi, UnitedSiC, GeneSiC Semiconductor, Semikron Danfoss, Fuji Electric, ere*x Inc., TT Electronics, Renesas Electronics, BYD Semiconductor, InventChip Technology, II-VI (Coherent Corp.), Xiamen Sanan Integrated Circuit Co. Ltd., and SK siltron CSS.

Significant Corporate Moves Enhancing Market Offerings
In December 2024, onsemi, a US-based provider of intelligent power and sensing semiconductor solutions, acquired United Silicon Carbide along with the silicon-carbide Junction Field-Effect Transistor (SiC JFET) technology business from Qorvo for US $115 million. This strategic acquisition allows onsemi to strengthen its silicon carbide semiconductor portfolio and expand its presence in high-efficiency power applications, including AI data centers, electric vehicles, and solid-state circuit breakers, thus boosting its technological capabilities and market influence. Qorvo, known for its RF solutions and semiconductor technologies, focuses on advanced wireless, defense, and connectivity applications.

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Emerging Trends Shaping the Future of Silicon Carbide Semiconductor Devices
Key companies in the silicon carbide semiconductor device market are prioritizing the development of new devices designed to reduce switching losses, which refer to the energy lost during transitions between conducting and non-conducting states in semiconductor devices. This reduction is critical for improving efficiency and device performance.

For example, in August 2023, Toshiba Electronic Devices & Storage Corporation introduced its third-generation silicon carbide (SiC) MOSFETs through the TWxxxZxxxC series. These devices are engineered for industrial applications such as servers, data centers, electric vehicle charging stations, photovoltaic inverters, and uninterruptible power supplies. Notably, the MOSFETs come in a TO-247-4L(X) package featuring a fourth pin that provides a Kelvin connection for the gate drive signal source terminal. This design innovation minimizes parasitic inductance effects, enhancing high-speed switching capabilities. The series includes devices rated for 650V and 1200V VDSS and supports continuous drain currents up to 100A, marking a significant advancement in power electronics technology for demanding industrial environments.

Breakdown of Silicon Carbide Semiconductor Device Market Segments
The silicon carbide semiconductor device market is segmented in several ways to capture the variety of products and applications:

1) By Type:
- SIC Diode
- SIC Transistor
- Other Types

2) By Wafer Size:
- 1 Inch To 4 Inches
- 6 Inches
- 8 Inches
- 10 Inches And Above

3) By End-User Industry:
- Automotive
- Consumer Electronics
- Aerospace And Defense
- Medical Devices
- Data And Communication Devices
- Energy And Power
- Other End-Users

Further subsegments include:

1) SIC Diode: Schottky Barrier Diodes (SBD), PiN Diodes
2) SIC Transistor: SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), SiC BJT (Bipolar Junction Transistor), SiC IGBT (Insulated Gate Bipolar Transistor)
3) Other Types: SiC Rectifiers, SiC Modules, SiC Power Devices

This detailed segmentation highlights the broad range of silicon carbide semiconductor products catering to varied technological needs and application areas.

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This release was published on openPR.