Top Companies and Market Competition in the Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Industry

The silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market is positioned for remarkable growth over the coming years, driven by technological advancements and rising demand across various industries. This sector is becoming increasingly pivotal as electric vehicles, smart grids, and efficient power solutions gain momentum worldwide. Let's explore the market's size, key players, trends, and segmentation to better understand its future trajectory.

Projected Market Size and Growth of the Silicon Carbide MOSFET Industry
The market for silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) is anticipated to expand significantly, reaching a valuation of $6.56 billion by 2030. This growth reflects a strong compound annual growth rate (CAGR) of 24.8%. Factors contributing to this expansion include the rising production of electric vehicles (EVs), the adoption of 200 mm wafer technology, the growth of smart grids, increased investments in high-voltage charging infrastructure, and the growing demand for compact power modules. Looking ahead, important trends like AI-driven power optimization, the development of sustainable high-efficiency power devices, advancements in smart mobility power electronics, intelligent manufacturing processes for SiC MOSFETs, and improvements in EV powertrain electrification will shape the market landscape.

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Key Drivers Behind the Silicon Carbide MOSFET Market Expansion
The surge in electric vehicle manufacturing is a primary force propelling the SiC MOSFET market forward. As EVs become more widespread, the need for efficient, reliable, and compact power semiconductor devices intensifies, making SiC MOSFETs an essential component. This trend is supported by ongoing innovations and investments in technology that improve performance and reduce costs.

Another major driver is the scaling of 200 mm wafer technology, which enhances production efficiency and lowers manufacturing expenses. Coupled with expanding smart grid systems requiring advanced power electronics, these developments are fostering a favorable environment for market growth. Furthermore, rising investments in high-voltage charging solutions and the shift toward compact power modules add momentum, creating more opportunities for SiC MOSFET adoption in diverse applications.

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Leading Companies Steering the Silicon Carbide MOSFET Market
Several prominent players dominate the SiC MOSFET market, including Mitsubishi Electric Corporation, Toshiba Corporation, Texas Instruments Incorporated, STMicroelectronics N.V., Infineon Technologies AG, ON Semiconductor Corporation, Fuji Electric Co. Ltd., Microchip Technology Inc., Qorvo Inc., ROHM Co. Ltd., Vishay Intertechnology Inc., Littelfuse Inc., Alpha and Omega Semiconductor, Wolfspeed Inc., Semikron Danfoss, Sansha Electric Manufacturing Co. Ltd., Navitas Semiconductor, WeEn Semiconductors, Micro Commercial Components (MCC), and Solitron Devices Inc.

A notable development occurred in January 2025 when ON Semiconductor Corporation, a US-based semiconductor firm, acquired Qorvo's Silicon Carbide JFET Technology Business for $115 million. This strategic acquisition aimed to expand ON Semiconductor's portfolio of wide bandgap power semiconductors and accelerate the introduction of high-efficiency SiC switching solutions tailored for electric vehicles, AI data centers, and industrial power applications. Qorvo Inc., also based in the US, specializes in silicon carbide power semiconductor products.

Emerging Innovations Shaping the Silicon Carbide MOSFET Market
Companies in the SiC MOSFET sector are focusing heavily on the development of next-generation devices that improve energy efficiency and minimize power loss. These advanced MOSFETs are engineered to reduce conduction losses, boost thermal performance, and support higher power density along with faster switching speeds, all while offering enhanced reliability.

For example, in September 2024, STMicroelectronics N.V., headquartered in Switzerland, introduced its fourth-generation STPOWER silicon carbide MOSFET technology. Designed for next-generation electric vehicle traction inverters, these new devices, available in 750V and 1200V classes, deliver lower on-resistance, quicker switching speeds, and improved robustness. This enables more compact and efficient designs suitable for both 400V and 800V EV systems. Such improvements contribute significantly to faster charging times and lighter vehicle weight, thereby supporting broader electric vehicle adoption.

Market Segmentation Within the Global Silicon Carbide MOSFET Industry
The silicon carbide MOSFET market is categorized into several key segments to provide a detailed outlook:

By Type:
- Silicon Carbide (SiC) MOSFET Modules
- Silicon Carbide (SiC) MOSFET Discretes

By Breakdown Voltage:
- 650 - 900 Volts
- 900 - 1200 Volts
- 1200 - 1700 Volts
- Above 1700 Volts

By Technology:
- 200 Millimeter (mm) Wafer Technology
- 150 Millimeter (mm) Wafer Technology

By Application:
- Power Supplies
- Electric Vehicles (EVs)
- Renewable Energy Systems
- Motor Drives
- Industrial Equipment

By End-Use Industry:
- Automotive
- Industrial
- Consumer Electronics
- Telecommunications
- Other End-Use Industries

Further subcategories include:

For SiC MOSFET Modules:
- Half-Bridge Modules
- Full-Bridge Modules
- Six-Pack Modules
- Buck or Boost Converter Modules
- Power Integrated Modules
- Intelligent Power Modules
- Custom Power Modules

For SiC MOSFET Discretes:
- N-Channel MOSFETs
- P-Channel MOSFETs
- Enhancement-Mode MOSFETs
- Depletion-Mode MOSFETs
- Low Drain-To-Source On-Resistance MOSFETs
- High-Voltage MOSFETs
- Automotive-Grade MOSFETs

This detailed segmentation allows for a comprehensive understanding of the market's scope and the specific products driving innovation and application across industries.

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This release was published on openPR.