Segmentation, Major Trends, and Competitive Overview of the Intelligent Power Module Market

The intelligent power module market is set for remarkable expansion in the coming years as technological advancements and increased application areas drive demand. With innovations in semiconductor materials and growing adoption in diverse sectors, this market is attracting significant attention from manufacturers and end-users alike. Let's explore the projected market size, key players, influential trends, and segment breakdowns shaping the future of intelligent power modules.

Projected Market Size and Growth Trajectory of the Intelligent Power Module Market
The intelligent power module market is poised for swift growth, anticipated to reach a valuation of $5.6 billion by 2030. This expansion corresponds to a compound annual growth rate (CAGR) of 13.9% during the forecast period. Several factors are contributing to this surge, including the rising incorporation of smart IPM modules and AI-enhanced motor control technologies. Additionally, growth in renewable energy infrastructure, increased use in high-performance industrial drives, and the proliferation of connected inverter platforms are important drivers. Upcoming trends expected to influence the market include AI-based drive control integration, widespread deployment of intelligent power modules, adoption of self-protecting semiconductor functionalities, and the enhancement of high-performance motor control systems.

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Leading Industry Players Driving the Intelligent Power Module Market
The market features a competitive landscape with numerous prominent companies steering its development. Key players include Mitsubishi Electric Corp., ON Semiconductor Corporation, Infineon Technologies AG, Fuji Electric Co. Ltd., Semikron Elektronik GmbH & Co. KG, ROHM Co. Ltd., Microchip Technology Inc., Toshiba Electronic Devices & Storage Corporation, Vincotech GmbH, ere*x Inc., Renesas Electronics Corporation, Silan Semiconductor Manufacturing Group, Power Integrations Inc., Sanken Electric Co. Ltd., Vishay Intertechnology Inc., Fairchild Semiconductor International Inc., International Rectifier Corporation, IXYS Corporation, Hitachi Power Semiconductor Device Ltd., SanRex Corporation, ABB Ltd., Texas Instruments Inc., STMicroelectronics N.V., Microsemi Corporation, Ideal Power Inc., TECX Inc., Vicor Corporation, Quail Electronics Inc., and TAMURA Corporation.

A notable collaboration took place in July 2023 when Onsemi, a US-based semiconductor manufacturer, partnered with BorgWarner Inc. This alliance aims to broaden their strategic efforts around silicon carbide (SiC) technologies, which are vital for electric vehicle development and other high-power applications due to their efficiency in power handling, size, and weight advantages. Together, the companies seek to meet the increasing demand for SiC-based components in the automotive industry.

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Emerging Trends Catalyzing Growth in the Intelligent Power Module Sector
A significant trend shaping this market is the development of silicon-carbide (SiC)-based intelligent power modules. These advanced modules address the growing needs for higher power density, improved energy efficiency, and better thermal management in applications such as electric vehicles, industrial automation, and renewable energy systems. SiC modules combine SiC MOSFETs with integrated gate drivers and protection circuits, offering enhanced switching efficiency and reduced heat generation compared to traditional silicon IGBT modules.

For example, in March 2025, Onsemi introduced the EliteSiC SPM 31 series, a 1200 V SiC MOSFET-based intelligent power module. This product boasts superior energy efficiency, better thermal performance, and a more compact footprint than conventional Field-Stop 7 IGBT modules. Rated for current capacities between 40 A and 70 A, it is designed for three-phase inverter drive applications including EC fans in AI data centers, heat pumps, servo motors, variable frequency drives (VFDs), robotics, and industrial pumps and fans. By integrating advanced SiC technology with built-in gate drivers and protection features, this module simplifies system design, reduces power losses, and shortens development cycles.

Detailed Breakdown of Intelligent Power Module Market Segments
This report segments the intelligent power module market as follows:

1) Power Device Types: Insulated-Gate Bipolar Transistor (IGBT) and Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
2) Voltage Ratings: Up To 600 V, 601-1,200 V, Above 1,200 V
3) Industry Verticals: Consumer Electronics, Automotive, Industrial, Aerospace, Defense, and Other Verticals
4) Applications: Renewable Energy Generation, Home Appliances, Electric Vehicles, Servo Drives, and Other Applications

Further subcategories include:

- For IGBT: Standard IGBT Modules, High Voltage IGBT Modules, Low Voltage IGBT Modules
- For MOSFET: Standard MOSFET Modules, High Power MOSFET Modules, Low Voltage MOSFET Modules

This structured segmentation offers a comprehensive view of the intelligent power module market's diverse components and usage areas, highlighting the breadth of technologies and applications influencing its growth.

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This release was published on openPR.