MM60180P45B: 6-18GHz 30W GaN High-Frequency Broadband RF Power Amplifier

In radar, satellite communications, and high-end test and measurement fields, the demand for broadband rf power amplifier wideband high-power amplifiers covering the C, X, and Ku bands continues to grow. The broadband rf power amplifier MM60180P45B [https://www.marsrf.com/state-of-the-art-power-performance-rf-broadband-high-power-amplifiers-mm60180p45b-product/] is a solution that provides a superior core RF power solution for next-generation electronic systems, thanks to its ultra-wideband instantaneous coverage of 6-18GHz, its efficient gallium nitride (GaN)-based architecture, and its extremely compact industrial design.

The broadband rf power amplifier MM60180P45B [https://www.marsrf.com/state-of-the-art-power-performance-rf-broadband-high-power-amplifiers-mm60180p45b-product/] is a Class AB multi-octave high power amplifier designed to achieve a perfect balance between high performance and high integration.

1. Ultra-wideband Coverage: The MM60180P45B broadband rf power amplifier operates from 6GHz to 18GHz, spanning the three key C, X, and Ku bands. A single unit can meet the needs of multiple frequency band applications, greatly simplifying system architecture.

2. Robust Power Output: Across such a wide frequency range, the MM60180P45B broadband rf power amplifier delivers a typical saturated output power of 30W, ensuring ample power headroom and dynamic range for the signal chain.

3. Superior Electrical Performance: The MM60180P45B broadband rf power amplifier features excellent input return loss (typically -10dBc) and employs industry-standard 50-ohm input and output impedances, ensuring seamless and efficient connectivity with upstream and downstream RF systems.

The core competitiveness of the MM60180P45B [https://www.marsrf.com/state-of-the-art-power-performance-rf-broadband-high-power-amplifiers-mm60180p45b-product/] broadband rf power amplifier stems from its use of third-generation semiconductor material-gallium nitride (GaN)-and mature chip-and-wire technology. The inherent high electron mobility and breakdown voltage characteristics of GaN devices enable the amplifier to achieve higher gain and superior power-added efficiency, effectively reducing system power consumption while improving output capability.

To ensure absolute reliability during long-term operation, the broadband rf power amplifier MM60180P45B is not merely a simple amplifier module. Its internal integrated intelligent control and protection circuitry system can monitor operating status in real time and provide comprehensive protection against over-temperature and over-current. This design not only extends the product's lifespan but also significantly enhances the safety and stability of the entire RF system.

Application Prospects

* Radar Systems
* Satellite Communications
* Testing and Measurement
* Broadband Communications

Mars RF is committed to providing customers with high-performance products that are delivered promptly. We has established a complete supply chain management system, and its core component and transistor suppliers are all localized. This strategy greatly ensures the stability and efficiency of raw material supply, fundamentally shortening product delivery cycles and ensuring that customer project progress is not affected by external factors.

The broadband rf power amplifier MM60180P45B [https://www.marsrf.com/state-of-the-art-power-performance-rf-broadband-high-power-amplifiers-mm60180p45b-product/] is currently in stock and can be shipped before the end of this year. This broadband rf power amplifier is also participating in a year-end special offer, with the best price of the year. Please contact us for a quote and technical support.

Phone:+86-28-87882380

Mob./WhatsApp:+86 199 5039 1137

E-mail: info@marsrf.com

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Company Name: Mars RF
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Country: China
Website: https://www.marsrf.com/

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