Press release
Gallium Oxide Power Devices Market to Reach USD 1.42 Billion by 2030
Gallium Oxide Power Devices Market
Pune, India - Exactitude Consultancy releases its latest market insight on the Gallium Oxide (Ga2O3) Power Devices Market, highlighting substantial growth fueled by the rising need for ultra-wide bandgap (UWBG) semiconductors. Gallium oxide offers superior breakdown voltage, higher critical electric fields, and cost-effective substrate manufacturing-positioning it as an emerging challenger to silicon carbide (SiC) and gallium nitride (GaN).
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Key Takeaways
• Market Size (2030): USD 1.42 Billion
• CAGR (2025-2030): 34.5%
• Ga2O3 Schottky diodes and FETs gaining rapid commercial interest.
• Highest adoption expected in EV fast charging, industrial power, and renewable energy systems.
• Asia Pacific leads manufacturing ecosystem; North America leads in R&D.
Market Story: Why Gallium Oxide Is the Next Big Leap in Power Electronics
Gallium oxide (Ga2O3) is gaining momentum due to its ultra-wide bandgap of ~4.8 eV, which far exceeds SiC and GaN, enabling:
• Higher breakdown voltages
• Lower switching losses
• Operation at extreme temperatures
• Higher energy efficiency
• Cost-effective melt-growth substrate manufacturing (compared to SiC)
Ga2O3 offers performance benefits for high-power, high-voltage, and high-frequency applications, making it a pivotal material for next-generation electronics.
Industries leveraging Ga2O3 include:
• Electric vehicles & EV charging (350-950V systems)
• Solar inverters and renewable energy grids
• Industrial power supplies
• Aerospace & defense high-power systems
• Data centers & telecom power modules
As global demand for power efficiency continues to rise, Ga2O3 devices are transitioning from laboratory prototypes toward commercial applications.
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Market Segments
By Device Type
• Schottky Barrier Diodes (SBDs) - Largest share
• Power MOSFETs
• Junction Gate FETs (JFET)
• High-electron-mobility transistors (HEMT)
• IGBTs (Emerging research stage)
By Application
• Electric Vehicles & Charging Systems
• Renewable Energy & Solar Inverters
• Industrial Motor Drives
• Power Conversion & Power Supplies
• UPS & Energy Storage Systems
• Aerospace & Defense
• High-voltage Power Switching
By Wafer Type
• Epitaxial Ga2O3
• Bulk Ga2O3 Substrate
• Thin-film Ga2O3
By End User
• Automotive OEMs and Tier-1 suppliers
• Semiconductor manufacturers
• Power electronics companies
• Aerospace & defense contractors
• Industrial automation firms
• Energy & utility companies
• Research institutes
By Region
• Asia Pacific - Leading due to strong semiconductor ecosystem (Japan, China, South Korea)
• North America - Big investments in R&D and defense applications
• Europe - Growing adoption in renewable energy and EV fast charging
• Latin America & MEA - Emerging opportunities in industrial power systems
Recent Developments
• Flosfia announced new breakthroughs in Ga2O3 MOSFET performance for automotive applications.
• Novel Crystal Technology expanded commercial production of β-Ga2O3 substrates.
• NICT & Tamura Corp. demonstrated high-voltage Ga2O3 power modules.
• Cornell University published advancements in Ga2O3 thermal management techniques.
• Infineon & Mitsubishi Electric increased investments in UWBG device R&D.
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Expert Quote
"Gallium oxide is redefining the boundaries of power electronics. Its ultra-wide bandgap and high breakdown field make it a game-changing material for EVs, renewable energy, and high-power industrial systems. The shift toward Ga2O3 is accelerating as industries demand higher efficiency and lower switching losses,"
- Irfan Tamboli, Business Development Executive, Exactitude Consultancy
Key Drivers
• Rising global electric vehicle production
• Growth of renewable energy and solar inverter installations
• Demand for ultra-efficient high-voltage switching
• Cost advantages over SiC due to melt-growth substrate fabrication
• Rising need for compact, thermally robust power modules
• Increasing R&D investments in UWBG semiconductors
Forecast Outlook (2025-2030)
The Gallium Oxide Power Devices Market is expected to grow at a powerful 34.5% CAGR, driven by growing commercialization of Ga2O3 FETs, improved thermal management technologies, and rising adoption across EV, industrial, and utility sectors. By 2030, Ga2O3 is positioned to emerge as a key material in the global power semiconductor landscape.
Regional Insights
• Asia Pacific:
o Strongest manufacturing base for Ga2O3 substrates
o High adoption in EV and industrial power markets
• North America:
o Strong R&D spending, aerospace demand, and defense innovations
• Europe:
o Growth driven by renewable energy expansion and automotive electrification
Conclusion
Gallium oxide is unlocking the next evolution of power semiconductors, delivering unmatched efficiency and high-voltage capability. As industries push toward electrification and energy sustainability, Ga2O3 power devices are set to play a defining role in future power electronics architecture.
This report is also available in the following languages : Japanese (酸化ガリウムパワーデバイス市場), Korean (갈륨 산화물 전력 장치 시장), Chinese (氧化镓功率器件市场), French (Marché des dispositifs de puissance à oxyde de gallium), German (Markt für Galliumoxid-Leistungselektronik), and Italian (Mercato dei dispositivi di potenza all'ossido di gallio), etc.
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Connect Us:
Irfan Tamboli
PHONE NUMBER +1 (704) 266-3234
EMAIL ADDRESS: sales@exactitudeconsultancy.com
About Us
Exactitude Consultancy is a market research & consulting services firm which helps its client to address their most pressing strategic and business challenges. Our market research helps clients to address critical business challenges and also helps make optimized business decisions with our fact-based research insights, market intelligence, and accurate data.
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