Gallium Nitride (GaN) Epiwafers Market to Expand at CAGR 16.3% | Global Outlook & Forecast 2025-2031

Market Summary -

The global market for Gallium Nitride (GaN) Epiwafers was estimated to be worth US$ 646 million in 2024 and is forecast to a readjusted size of US$ 1759 million by 2031 with a CAGR of 16.3% during the forecast period 2025-2031.

Accourding to QY Research has released a new publication titled "Global Gallium Nitride (GaN) Epiwafers Market Share and Ranking, Overall Sales and Demand Forecast 2025-2031." This comprehensive study provides an in-depth evaluation of the worldwide Gallium Nitride (GaN) Epiwafers industry, uncovering the major forces influencing market growth and delivering high-value insights for investors, industry leaders, and strategic decision-makers. The report examines critical elements such as market dynamics, evolving technologies, segmentation trends, regional developments, and the competitive landscape. With data backed by rigorous research and expert interpretation, it offers an authoritative guide to understanding the macroeconomic and microeconomic factors reshaping the global market.

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This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on Gallium Nitride (GaN) Epiwafers cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.

Epitaxial wafer refers to a product formed by growing a layer of new single crystal on a single crystal substrate. Epitaxial wafer determines about 70% of the performance of the device and is an important raw material for semiconductor chips. As a semiconductor raw material, epitaxial wafer is located at the upstream of the semiconductor industry chain and is a supporting industry for the semiconductor manufacturing industry. Epitaxial wafer manufacturers use CVD (Chemical Vapor Deposition) equipment, MBE (Molecular Beam Epitaxy) equipment, HVPE equipment, etc. to perform crystal epitaxial growth on substrate materials to make epitaxial wafers. Epitaxial wafers are then made into wafers through manufacturing links such as lithography, thin film deposition, and etching. Wafers are further cut into bare chips, and bare chips are finally made into chips through packaging links such as fixing on the substrate, adding a protective shell, connecting the chip circuit pins with the external substrate with wires, and testing links such as circuit testing and performance testing. The above chip production links need to interact with the chip design link to ensure that the final chip meets the chip design requirements.

The voltage tolerance of gallium nitride devices is usually around 1000V, and the safe operating voltage is usually below 650V.

GaN devices can conduct electrons more efficiently than silicon devices and can withstand higher electric fields. It exceeds the performance of silicon devices in terms of speed, temperature and power, and has gradually replaced silicon-based devices in power conversion and RF applications. Due to the higher efficiency, significantly reduced size, lighter weight and better heat dissipation performance of GaN-based systems, it has begun to replace traditional silicon devices on the market and has enabled new applications such as lidar and RF envelope tracking.

With the continuous update and generation of LED chip technology and process, the luminous efficiency, technical performance, product quality and cost-effectiveness of LED lighting products have been greatly improved; coupled with the increasing number of related enterprises and investments in the industrial chain, the production and manufacturing technology of LED light source manufacturing and supporting industries has been continuously upgraded, and the cost-effectiveness of large-scale production of terminal products has been further improved. At present, LED lighting products have become the mainstream application in application fields such as home lighting, outdoor lighting, industrial lighting, commercial lighting, landscape lighting, backlight display, etc.

The market penetration rate of LED lighting products replacing traditional lighting products continues to increase, and market demand continues to grow. There are still many difficulties in the development and industrialization of Micro-LED display technology. At the same time, Micro-LED epitaxy has stricter requirements on defects and uniformity than traditional LEDs. In the future, the penetration of gallium nitride technology in the LED optoelectronic field will gradually expand.

Recent Developments -

The authors of the report have put forward recent developments by key participants. Other strategic activities by manufacturers such as M&A, joint ventures, collaborations, innovation, product offerings, and research and development activities are highlighted in this research study. This will keep the users up-to-date about the undertakings and give the users a crystal-clear understanding of the key advancements emerging in the business.

Based on the performance of gallium nitride, gallium nitride epitaxial wafers are mainly suitable for applications under high power, high frequency, medium and low voltage, which are specifically reflected in: -

1) High bandgap width: The high bandgap width improves the voltage resistance level of gallium nitride devices and can output higher power than gallium arsenide devices, which is particularly suitable for 5G communication base stations, military radars and other fields;

2) High conversion efficiency: The on-resistance of gallium nitride switching power electronic devices is 3 orders of magnitude lower than that of silicon devices, which can significantly reduce switching conduction losses;

3) High thermal conductivity: The high thermal conductivity of gallium nitride gives it excellent heat dissipation performance, which is suitable for the production of devices in high power, high temperature and other fields;

4) Breakdown electric field strength: Although the breakdown electric field strength of gallium nitride is close to that of silicon nitride, it is affected by factors such as semiconductor technology and material lattice mismatch.

Market Drivers, Challenges & Restraints -

This section outlines the various elements influencing the trajectory of the Gallium Nitride (GaN) Epiwafers market:

Key Growth Drivers -
- Supportive policy frameworks and regulatory reforms
- Advancement in product innovation and technological breakthroughs
- Growing demand in emerging application areas
- Shift in global supply chain structures
Restraints & Challenges -

- Regulatory uncertainties
- Competitive pricing pressures
- Operational risks
- Market-entry barriers

The report also highlights rising opportunities that companies can leverage to gain traction in high-growth segments.

Why should you purchase this report?

Purchasing this report provides you with a comprehensive and data-driven understanding of the market landscape, enabling informed business decisions and strategic planning. The report comes with free customization based on client requirements, including a country-level breakdown of any five countries of your choice and a competitive analysis of segment revenue by key market players. With detailed insights into market trends, growth drivers, challenges, competitive dynamics, and emerging opportunities, this report equips stakeholders, manufacturers, and investors with actionable intelligence to identify profitable prospects, optimize operations, and maintain a competitive edge in the industry.

Major Company Included: -

NTT AT
Wolfspeed
SCIOCS (Sumitomo)
EpiGaN (Soitec)
DOWA Electronics Materials
IQE
Enkris Semiconductor Inc
CorEnergy
GLC
Genettice
Suzhou Nanowin
Episil-Precision Inc
Xinguan Technology
Shanxi Yuteng

The competitive section of the report provides essential insights needed for companies to strengthen their market positioning. It highlights the strategies adopted by leading players-covering innovation, pricing models, marketing channels, distribution networks, and regional expansion. This evaluation enables market participants to identify competitive advantages and understand challenges that may affect their long-term performance.

Market Segmentation -

The report presents a granular breakdown of the global Gallium Nitride (GaN) Epiwafers market, emphasizing CAGR, market share, future potential, and emerging trends across each segment.

By Type

GaN-on-Sapphire
GaN-On-Si
GaN-On-SiC
GaN-on-GaN
Others

By Application

Photoelectric
Electronic Power
Microwave RF

This segmentation helps identify high-growth niches and valuable investment opportunities across product types and applications.

Regional Analysis -

The report offers a detailed geographic assessment covering four major regions and key contributing countries. Insights include consumption patterns, production levels, market share distribution, and long-term growth prospects.

North America

United States
Canada
Mexico

Latin America

Brazil
Other key regional markets

Asia-Pacific

China
Japan
India
South Korea
ASEAN Countries

Europe, Middle East & Africa (EMEA)

Germany
France
United Kingdom
GCC Countries
African Nations

The analysis spans from 2024 (base year) to 2031 (forecast period).

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Why This Report Is Essential -

✔ Complete Historical & Forecast Analysis (2020-2031)
✔ Detailed Segmentation by Type, Application & Region
✔ In-Depth Competitive Landscape & Company Profiling
✔ Drivers, Restraints & Market Dynamics Explained
✔ Expert Insights to Support Strategic Planning

Report Objectives -

✔ Measure the global Gallium Nitride (GaN) Epiwafers market size (value & volume).
✔ Accurately analyze market shares, consumption trends, and segment performance.
✔ Examine major market dynamics and industry-shaping forces.
✔ Identify and discuss key production, revenue, and sales trends.
✔ Profile top market players and evaluate their competitive strategies.
✔ Review manufacturing practices, pricing structures, and cost trends.
✔ Compare regional and national market performance across key geographies.
✔ Forecast segment-wise and region-wise growth opportunities through 2031.

Key Questions Answered in the Report -

✔ What is the size and estimated growth rate of the global and regional Gallium Nitride (GaN) Epiwafers market?
✔ Which countries are expected to display the strongest growth?
✔ Which region will dominate the market throughout the forecast period?
✔ What are the main factors driving or restraining market expansion?
✔ What technological advancements are shaping future demand?
✔ Where are the key opportunities for new entrants and established players?
✔ Which companies currently hold the highest market share?
✔ How will market dynamics evolve from 2025 to 2031?

Table of Contents - Major Key Points:

- Study Coverage
- Executive Summary
- Research Methodology
- Global Production Analysis
- Value Chain and Supply-Chain Analysis
- High Purity Silane (SiH4) for Semiconductors Market Dynamics
- Competition by Manufacturers
- High Purity Silane (SiH4) for Semiconductors Market Segmentation, By Type
- High Purity Silane (SiH4) for Semiconductors Market Segmentation, By Application
- Regional Analysis
-Corporate Profile
- Conclusion.

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