Global and U.S. Silicon Nitride Precursor Market Report, Published by QY Research.

ROHM Co., Ltd., a semiconductor components manufacturer in Japan faced recurring defects in LPCVD silicon nitride (Si3N4) films used for passivation and dielectric layers on advanced logic wafers. Conventional gas-phase precursors such as dichlorosilane (DCS) and ammonia resulted in high hydrogen content, variable film stress, and suboptimal step coverage in high-aspect-ratio features, leading to microcracks and dielectric reliability issues. To solve this, the company transitioned to Liquid and Low-Chlorine Silicon Nitride Precursors, such as trisilylamine (TSA) and aminosilane variants engineered for ultra-high-purity vaporization and controlled nitrogen incorporation. These precursors offer improved reactivity, lower impurity levels, and smoother deposition profiles during ALD and low-temperature CVD processes. After integrating the new precursor system with precision bubbler delivery, the manufacturer achieved denser Si3N4 films, reduced hydrogen content by >50%, improved step coverage in sub-20 nm trenches, and significantly enhanced dielectric breakdown strength. Silicon nitride precursors are now essential for advanced DRAM, logic, TSV insulation, photonics passivation layers, and MEMS protective coatings.

https://www.qyresearch.com/reports/5444873/silicon-nitride-precursor

Core market data:

Global market size: USD 748 million
CAGR (2024-2030): 6.5%
Average price: USD 1800 per ton
Annual production: 41 kilotons
Gross margin: 36%
Production capacity: 52 kilotons

List of Main players:

Gelest (USA)
SIAD (Italy)
Tokuyama (Japan)
Entegris (USA)
Kanto Chemical (Japan)
Meryer Chemical (China)
Qnity Electronics (USA)
Merck Group (Germany)
Praxair (USA)
SK Materials (South Korea)
Hansol Chemical (South Korea)
Wacker Chemie (Germany)
Momentive (USA)
Nippon Sanso (Japan)

1. By Chemical Type

Silane-based Precursor
Chlorosilane-based Precursor
Aminosilane-based Precursor
Silylamine-based Precursor
Polysilazane-based Precursor

2. By Deposition Grade

Electronic Grade
Technical Grade

3. By Physical Form

Gas-phase Precursor
Liquid-phase Precursor
Solid-state Precursor

4. By Application

Optoelectronics
Semiconductors
Power Electronics
Automotive Electronics
Advanced Ceramics

Case study for bidding

Time: February 2024
Supplier: Entegris, Inc.
Buyer: Samsung Electronics
Product: TDMAS (Tris(dimethylamino)silane) High-Purity ALD Precursor (99.9999% purity)
Quantity: 1,450 tons
Contract Value: USD 24.6 million
Delivery Timeline: January 2025

Detailed Application Scenario

Samsung Electronics used Entegris' ultra-high-purity silicon nitride precursor (TDMAS) for ALD deposition of silicon nitride passivation layers in advanced 5 nm and 3 nm semiconductor devices. The precursor's excellent volatility and controlled reactivity enabled highly conformal film growth on intricate 3D transistor structures such as FinFETs and GAA nanosheets.

The low impurity content minimized electrical defects and improved dielectric breakdown performance. Its compatibility with low-temperature ALD allowed deposition on temperature-sensitive metal gates and BEOL layers without substrate warping.

Samsung selected TDMAS because of its consistent vapor pressure, ultra-low metal contamination (

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This release was published on openPR.