6-Inch GaN-On-Si Epiwafer Market Share Driven by 5G Expansion and High-Power Electronics Demand | Valuates Reports

6 -Inch GaN-On-Si Epiwafer Market
The global market for 6 -Inch GaN-On-Si Epiwafer was valued at US$ million in the year 2024 and is projected to reach a revised size of US$ million by 2031, growing at a CAGR of %during the forecast period.

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The 6-Inch GaN-On-Si Epiwafer market is experiencing strong market growth as gallium nitride continues to gain traction in high-power and high-frequency semiconductor applications. Market trends are being shaped by rapid deployment of 5G infrastructure, broader adoption of energy-efficient power systems, and rising investment in compound semiconductor production capacity. As device manufacturers shift from traditional silicon toward GaN-on-silicon platforms for higher power density and lower energy loss, the market size expands with rising demand from telecom, defense, consumer electronics, and industrial sectors.

In terms of type, the thickness 725μm segment holds the largest market share due to its suitability for high-power and thermally demanding applications. This wafer thickness offers improved mechanical strength and reliability, making it widely used in advanced RF devices and power electronics. Thickness 610μm wafers also play a meaningful role in the market, particularly where cost optimization and high-volume production are key priorities, contributing additional diversity to the product landscape.

By application, 5G communication base stations represent the leading segment, supported by widespread deployment of GaN-based RF power amplifiers that offer higher efficiency and output performance in high-frequency operation. The military radar segment demonstrates strong market growth as defense systems increasingly adopt GaN components for enhanced detection range and system durability. Electronic devices and other specialized applications also contribute to expanding demand as GaN enables miniaturization, lower power loss, and faster switching performance in modern semiconductor systems.

Companies such as SEDI, Wolfspeed, Qorvo, IQE, EPIGAN, ALLOS Semiconductors, NTT Advanced Technology, Innoscience, Sanan Optoelectronics, and Beijing Sai Microelectronics hold significant market share by maintaining extensive product portfolios and strong technological capabilities. These companies are advancing material quality, wafer uniformity, and large-scale epitaxial production to meet accelerating market requirements. Newer entrants including Jiangsu Nenghua, Suzhou Nawei Technology, Jingzhan Semiconductor, Runxin Microelectronics, and Jiajing Electronics are also expanding rapidly, supported by rising domestic investment in compound semiconductor manufacturing.

Regionally, Asia-Pacific dominates the 6-Inch GaN-On-Si Epiwafer market share, with China, Japan, South Korea, and Taiwan leading in mass production, packaging, and fabrication capacity. North America and Europe also maintain strong presence due to advanced telecommunications innovation, defense modernization, and continued investment in semiconductor technology development. With accelerating adoption across telecom, power electronics, defense, and high-frequency systems, the market forecast indicates continued expansion driven by scaling production capacity, technological improvements, and ongoing transition toward GaN-based semiconductor architectures.

by Type

• Thickness 610μm
• Thickness 725μm

by Application

• 5G Communication Base Station
• Military Radar
• Electronic Device
• Other

By Company

SEDI, Wolfspeed, Qorvro, IQE, EPIGAN, ALLOS Semiconductors, NTT Advanced Technology, Innoscience, Jiangsu Nenghua, Suzhou Nawei Technology, Jingzhan Semiconductor, Runxin Microelectronics, Julicheng Semiconductor, Jiajing Electronics, Sanan Optoelectronics, Beijing Sai Microelectronics

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