Graphite Thermal Field for SiC Crystal Growth Furnace Market Share Rising with Expanding Semiconductor and Power Electronics Applications | Valuates Reports

Graphite Thermal Field for SiC Crystal Growth Furnace Market
Graphite is commonly used in thermal fields for SiC (Silicon Carbide) crystal growth furnaces. SiC crystal growth relies on a high-temperature process called the physical vapor transport (PVT) method, which necessitates a stable and uniform thermal environment. Graphite components are ideal for creating this thermal field due to their excellent thermal conductivity, high temperature resistance, and chemical inertness.
The global Graphite Thermal Field for SiC Crystal Growth Furnace market was valued at US$ million in 2023 and is anticipated to reach US$ million by 2030, witnessing a CAGR of %during the forecast period 2024-2030.

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The graphite thermal field for SiC crystal growth furnace market is experiencing robust growth as demand for silicon carbide (SiC)-based power devices accelerates in automotive, renewable energy, and 5G applications. Market trends show that graphite thermal fields play a critical role in enabling high-quality SiC crystal growth, ensuring thermal stability, and supporting mass-scale wafer production. With the global transition toward wide-bandgap semiconductors, the overall market size is expanding, supported by innovation in furnace design and consistent market growth.

By type, crucibles represent the largest market share, as they are essential in maintaining uniform temperature distribution during crystal growth. Insulation materials and heaters are also significant contributors, driven by ongoing advancements to improve energy efficiency and furnace performance. Meanwhile, seed crystal holders and backflow rings are expected to witness the fastest market growth, fueled by the rising demand for higher yield and improved quality in SiC wafers.

In terms of application, the OEM segment dominates the market share, as semiconductor manufacturers increasingly integrate graphite thermal field components into new-generation crystal growth furnaces. The replacement and modification segment is also showing strong market growth, driven by the need to upgrade existing furnaces for higher efficiency and cost-effective production. Both applications are supported by advancements in material science and precision engineering, ensuring consistent growth in adoption.

Looking ahead, the graphite thermal field for SiC crystal growth furnace market forecast indicates sustained expansion as SiC power devices gain prominence in electric vehicles, data centers, and energy infrastructure. Market growth will be fueled by increasing investments in semiconductor manufacturing, the expansion of SiC wafer production capacity, and continuous improvements in thermal management solutions. The market outlook underscores the strategic importance of graphite thermal fields in enabling the next generation of semiconductor technologies.

Segment by Type

• Crucible
• Insulation Materials
• Heater
• Seed Crystal Holder
• Backflow Ring
• Others

Segment by Application

• Replacement and Modification
• OEM

By Company

TOYO TANSO, SGL Carbon, Mersen, Tokai Carbon Co, Jinghang Special Carbon Technology Co, Hangzhou Vulcan New Material Technology Co, Chengdu Atek Special Graphite Co, Liaoning Aoyida Advanced Materials, Shandong Weiji Carbon-tech Co, Beijing North Yi Heng Graphite Technology Co, Chengdu Carbon Co, Shen Zhen Glodstone Technology Co, Ningbo HONGXIN NEW MATERIAL Technology Co, Saimaike Advanced Materials Co

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