Automotive GaN Technology Market Trends: forecast to reach US$18.05 billion by 2031

Automotive Gallium Nitride (GaN) technology is accelerating from promising niche to power-electronics mainstream. According to the Automotive GaN Technology - Global Market Share and Ranking, Overall Sales and Demand Forecast 2025-2031, the market was valued at US$181 million in 2024 and is forecast to reach US$18.05 billion by 2031, representing an exceptional 94.3% CAGR between 2025 and 2031. Asia-Pacific led the market with about 62% share in 2024, followed by Europe at 24% and North America at 12%. Products rated Above 200V accounted for 68% of sales, while Power System applications represented 48% of demand.

In 2025, leading semiconductor companies introduced breakthrough devices, confirming GaN's transition into commercial automotive platforms. Infineon launched its CoolGaNTM 650 V G5 bidirectional switch, Navitas released the first 650 V bidirectional GaNFastTM ICs, Texas Instruments advanced its automotive 650 V GaN stages with a 7.4-kW OBC reference, Innoscience broadened its AEC-Q101 100 V GaN line for LiDAR, and Transphorm expanded its AEC-Q101-qualified SuperGaN® FET portfolio.

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Leading Companies

Infineon
Innoscience
Power Integrations
Efficient Power Conversion
Navitas
Nexperia
Transphorm
Texas Instruments

Applications

Onboard Battery Chargers
Power System
ADAS Systems and LiDAR
Others

Classification

Below 200V
Above 200V

Latest Data

2024 Market Size: US$181 million
2031 Forecast: US$18,050 million
CAGR (2025-2031): 94.3%
Top-5 vendor share: ~69%
Regional share (2024): Asia-Pacific ~62%, Europe ~24%, North America ~12%
By Type (2024): Above 200V ~68%
By Application (2024): Power System ~48%

2025 Highlights

Infineon introduced the CoolGaNTM 650 V G5 bidirectional switch, which enables true monolithic bidirectional current blocking. This innovation reduces the need for back-to-back switches, making OBC and DC-DC designs more compact and efficient.

Navitas announced the world's first production-released 650 V bidirectional GaNFastTM ICs together with IsoFastTM isolated GaN drivers. These allow a single IC to replace up to four switches, unlocking single-stage architectures in OBCs and bidirectional converters.

Texas Instruments expanded its automotive portfolio with the LMG3522R030-Q1, a 650 V, 30 mΩ GaN FET with integrated driver, protection, and telemetry. TI's updated 7.4-kW bidirectional OBC reference design demonstrates high efficiency and density.

Innoscience released AEC-Q101 100 V GaN devices such as the INN100W135A-Q, delivering up to 13× faster switching and narrower pulses than silicon. These are optimized for LiDAR and 48 V DC-DC converters.

Transphorm, now under Renesas, continued to expand its AEC-Q101 SuperGaN® platform, strengthening supply assurance and automotive integration prospects.

Five Representative Products

Infineon - CoolGaNTM BDS 650 V G5

· True bidirectional monolithic GaN switch

· Active current blocking in both directions

· Packaged in top-side cooled format for high power density

· Enables single-stage OBC and DC-DC architectures

Navitas - 650 V Bidirectional GaNFastTM IC

· First production-released 650 V bidirectional GaN power IC

· Replaces up to four switches with one IC

· Allows single-stage OBC/DC-DC and higher frequency operation

Texas Instruments - LMG3522R030-Q1

· 650 V, 30 mΩ GaN FET with integrated driver and protection

· Automotive-grade, suited for OBC and high-voltage DC-DC

· Supported by a 7.4-kW bidirectional OBC reference design

Innoscience - INN100W135A-Q

· 100 V, AEC-Q101-qualified GaN with max 13.5 mΩ RDS(on)

· WLCSP package, compact footprint

· Achieves 13× faster switching and shorter pulses for LiDAR

Transphorm - TP65H035G4WSQA

· 650 V, AEC-Q101 SuperGaN® FET

· Designed for OBC and DC-DC applications

· Backed by Renesas' supply chain integration

Verified Downstream Customers

Vitesco Technologies
VREMT (Geely Group)
Changan Automobile
Marelli
Delta Electronics
Mazda
Canoo
ACEpower
Renesas
Infineon Automotive Power Solutions
Texas Instruments Automotive Designs
Transphorm Automotive Programs

Market Trend

From Two-Stage to Single-Stage

Bidirectional GaN devices are redefining OBC and DC-DC architectures. By replacing back-to-back switches with monolithic bidirectional devices, system complexity is reduced and power density is increased. This transition is expected to accelerate adoption from 2025 onward.

Efficiency and Power Density Gains

Vitesco Technologies demonstrated over 96% efficiency and ~4.2 kW/L power density with Infineon's GaN in its Gen5+ DC-DC converters. The shift from liquid to air cooling highlights GaN's ability to reduce system weight and simplify thermal management.

ADAS and LiDAR Adoption

Advanced driver-assistance systems and LiDAR demand faster, narrower pulses for long-range detection. Innoscience's 100 V AEC-Q101 GaN devices meet this need, enabling next-generation LiDAR with extended reach and improved resolution.

Consolidation and Manufacturing Expansion

The acquisition of Transphorm by Renesas, along with Infineon's investment in 8-inch GaN lines, shows that consolidation and capacity expansion are critical for securing automotive-grade supply and accelerating product qualification.

Vehicle-to-Grid and Vehicle-to-Load

OEMs like Changan are adopting GaN-based OBCs that support bidirectional power flow, paving the way for V2G and V2L applications. Navitas' GaN solutions are already moving into production programs with Geely and Changan, signaling GaN's role in enabling future energy ecosystems.

Design Enablement and Standardization

Reference designs such as TI's 7.4-kW OBC and Infineon's evaluation boards accelerate adoption by easing integration. The availability of AEC-Q-qualified products with integrated drivers and top-side cooled packaging reduces design risks for automotive OEMs.

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