GaN Semiconductor Device Market Key Players Analysis - Wolfspeed, Inc. (US), Qorvo, Inc. (US), MACOM Technology Solutions Holdings, Inc. (US), Infineon Technologies AG (Germany).

InsightAce Analytic Pvt. Ltd. announces the release of a market assessment report on the "Global GaN Semiconductor Device Market- (By Type (Opto-Semiconductor, RF Semiconductors, Power Semiconductor), By Device (Discrete Semiconductor, Integrated Semiconductor), By Application (Lightning & Lasers, Power Drives (LiDAR, Industrial Drives, E.V. drives), Supplies & Inverters (SMPS, Inverters, Wireless Charging, E.V. charging), Radio Frequency (R.F.), Front-End Module (FEM), Repeater/Booster/DAS, Radar & Satellite)), By Vertical (Consumer & Business Enterprises, Industrial, Automotive, Telecommunications, Aerospace & Defense, Healthcare, Energy & Power), By Voltage Range (Less than 100 V, 100-500 V, More than 500 V)), Trends, Industry Competition Analysis, Revenue and Forecast To 2031."

According to the latest research by InsightAce Analytic, the Global GaN Semiconductor Device Market is valued at US$ 20.18 Bn in 2022, and it is expected to reach US$ 34.53 Bn by 2031, with a CAGR of 6.3% during a forecast period of 2023-2031.

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A GaN (Gallium Nitride) semiconductor device is an electronic component that utilizes it as the semiconductor material for its construction. GaN is an advanced semiconductor material with several advantages over traditional materials like silicon. The recent surge in demand for energy-efficient semiconductor devices has also contributed to the growing popularity. The advantages of GaN semiconductor devices over silicon devices have contributed to the market's growth. Silicon materials are used to produce electronic gadgets such as smartphones, computers, cameras, and televisions.

On the other hand, GaN semiconductor devices, which are 100 times faster than silicon, have an opportunity due to the slowing in silicon's creative potential. GaN devices outperform silicon devices in a number of ways, including increased speed, lower costs, and better energy efficiency. The growing need for game consoles, cellphones, laptops, and TVs will probably propel the GaN semiconductor devices market in the consumer electronics industry. GaN power semiconductor demand in the ICT market has increased due to the introduction of the 5G standard, which has raised the requirement for base stations and high-power transistors.

List of Prominent Players in the GaN Semiconductor Device Market:
• Wolfspeed, Inc. (U.S.)
• Qorvo, Inc. (US.)
• MACOM Technology Solutions Holdings, Inc. (US.)
• Infineon Technologies AG (Germany)
• Sumitomo Electric Industries, Ltd. (Japan)
• Mitsubishi Electric Group (Japan)
• NexGen Power Systems. (US.)
• GaN Systems (Canada)
• Efficient Power Conversion Corporation (US.)
• Odyssey Semiconductor Technologies, Inc. (US.)
• ROHM Co., Ltd. (Japan)
• STMicroelectronics NV (Switzerland)
• NXP Semiconductors NV (Netherlands)
• Transphorm, Inc.,
• Analog Devices, Inc.,
• Texas Instruments Incorporated,
• Navitas Semiconductor,
• Microchip Technology Incorporated,
• Powdec,
• Northrop Grumman Corporation,
• Shindengen Electric Manufacturing Co., Ltd.,
• Toshiba Infrastructure Systems & Solutions Corporation,
• Renesas Electronics Corporation,
• Gallium Semiconductor,
• GaNpower

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Market Dynamics:
Drivers-
The rising requirement for consumer electronics such as laptops, smartphones, power adapters, high-speed chargers, LED lighting, smart-home devices, and gaming devices is likely to significantly impact the market's growth. Using GaN semiconductor devices in consumer electronics increases power density and efficiency. It improves charging rates, provides longer lifespans, and uses less electricity. GaN semiconductor devices, such as base stations and other network equipment, are also employed in enterprise applications. Its ability to handle high power and high frequencies improves wireless communications. As a result, rising demand in the consumer electronics industry and from business businesses is expected to drive market expansion.

Challenges:
The expensive cost of GaN semiconductor devices hinders their widespread implementation. Several factors contribute to their high price. To begin, the creation of GaN substrates, the foundation upon which the devices are created, necessitates sophisticated methods that necessitate specialized equipment and knowledge. Compared to more developed semiconductor materials like silicon, this complexity dramatically raises manufacturing costs. Furthermore, the scarcity of high-quality GaN substrates contributes to their high price, restricting production economies of scale.

Regional Trends:
The North American GaN Semiconductor Device Market is expected to register a major market share in terms of revenue and it is projected to grow at a high CAGR in the near future. Significant players in the United States, such as Cree, Inc., Efficient Power Conversion Corporation, Macom, Microsemi, Northrop Grumman Corporation, Qorvo, Inc., and others, have contributed to this expansion. This region's supremacy is also due to the increased purchase of gallium nitride devices and other related technologies in the United States and Canada. Texas Instruments Incorporated and Qorvo, Inc. are soliciting financing to produce GaN-based devices in the United States. The presence of established semiconductor manufacturing companies such as Toshiba (Japan), Nichia Corporation (Japan), and Mitsubishi Electric (Japan), increasing integration in consumer and business enterprise verticals, and government-led initiatives for innovation and industrial development are the major factors driving Asia Pacific market growth.

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Recent Developments:
• In June 2023, NexGen has just declared the commencement of production for the world's first 700V and 1200V vertical GaN semiconductors, which exhibit the most elevated switching frequencies. The 1200V Vertical GaN e-mode Fin-jFETs developed by NexGen were the sole wide-band-gap devices that effectively exhibited switching frequencies exceeding 1 MHz at a rated voltage of 1.4kV.
• In Dec 2021, Microchip Technology, Inc. announced a substantial expansion of its Gallium Nitride (GaN) Radio Frequency (RF) power device portfolio with the addition of new MMICs and discrete transistors covering frequencies up to 20 gigahertz (GHz). Combining high power-added efficiency (PAE) and high linearity, the devices enabled new levels of performance in applications spanning from 5G to electronic warfare, satellite communications, commercial and defence radar systems, and test equipment.

Segmentation of GaN Semiconductor Device Market-
By Type-
• Opto-Semiconductor
• RF Semiconductors
• Power Semiconductor
By Device-
• Discrete Semiconductor
• Integrated Semiconductor
By Application-
• Lightning & Lasers
• Power Drives
o LiDAR
o Industrial Drives
o E.V. drives
• Supplies & Inverters
o SMPS
o Inverters
o Wireless Charging
o E.V. charging
• Radio Frequency (R.F.)
o Front-End Module (FEM)
o Repeater/Booster/DAS
o Radar & Satellite
By Vertical-
• Consumer & Business Enterprises
• Industrial
• Automotive
• Telecommunications
• Aerospace & Defense
• Healthcare
• Energy & Power
By Voltage Range-
• Less than 100 V
• 100-500 V
• More than 500 V
By Region-
North America-
• The US
• Canada
• Mexico
Europe-
• Germany
• The UK
• France
• Italy
• Spain
• Rest of Europe
Asia-Pacific-
• China
• Japan
• India
• South Korea
• Southeast Asia
• Rest of Asia Pacific
Latin America-
• Brazil
• Argentina
• Rest of Latin America
Middle East & Africa-
• GCC Countries
• South Africa
• Rest of Middle East and Africa

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This release was published on openPR.