IGBT and Super Junction MOSFET Market to Reach US$10,100 Mn by 2019 Fueled by Demand for EV/HEVs

Insulated gate bipolar transistors (IGBTs) and super junction metal oxide field effect transistors (MOSFETs) are widely used as switches in a variety of power electronics systems, including wind turbines, uninterrupted power supplies (UPS), rail tractions, PV inverters, electric and hybrid electric vehicles, and a host of other industrial applications. IGBTs and super junction MOSFETs compete against other switching devices and technologies such as traditional MOSFETs, gallium nitride, and silicon carbide owing to higher efficiency and faster switching. IGBTs and super junction MOSFETs are preferred especially in applications requiring high input impedance and high voltage.

The report states that factors such as the rising use of IGBTs and super junction MOSFETs in electric and hybrid vehicles and the rising focus on greater energy efficiency are some of the factors propelling the global IGBT and super junction MOSFET market. The market holds excellent growth opportunities in the flourishing market for smart grids. However, the market is projected to be held back to a certain extent owing to the stiff competition from power semiconductors.

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The report examines the global IGBT and super junction MOSFET market by segmenting it on the basis of: product type, application, and geography.

Of the key applications of IGBTs, the industrial segment led the market in 2012, followed by the segment of motor drives. However, over the report’s forecast period, the segment of electric and hybrid electric vehicles is expected to expand at the fastest pace, a remarkable 21.1% CAGR.

In the super junction MOSFET category, the segment of chargers, adapters, and converters accounted for the largest share in the global market in 2012. Similar to the IGBT market, the market for super junction MOSFET is projected to witness the fastest development in the electric and hybrid electric vehicle segment over the report’s forecast period. The segment is projected to expand at an exponential 30.0% CAGR in the aforementioned forecast period.

On the basis of geography, the market is dominated by Asia Pacific, which accounted for a massive 39% of the global market in 2013. Asia Pacific is also projected to be the most rapidly expanding market over the report’s forecast period, owing to factors such as the increased demand for electric vehicles, the flourishing energy industry, and rising investments in the sector of high-speed rail. The thriving electronics manufacturing industry in countries such as Taiwan, China, and South Korea is also expected to boost the market for IGBT and super junction MOSFET in the region.

A recent market research report published by Transparency Market Research gives a thorough overview of the global IGBT and super junction MOSFET market and the market’s crucial elements. The report, titled “IGBT and Super Junction MOSFET Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2013 - 2019,” projects that the market will expand at a healthy 11.60% CAGR from 2013 to 2019. If the projections hold true, the market will rise to a valuation of US$10.1 bn by 2019, up from US$4.8 bn in 2012.

Browse the full IGBT and Super Junction MOSFET Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2013 - 2019 report at http://www.transparencymarketresearch.com/igbt-super-junction-mosfet-market.html

Some of the most influential vendors in the market are ABB Ltd., Semikron Inc., Fairchild Semiconductor International Inc., Infineon Technologies AG, Mitsubishi Electric Corporation, Hitachi Power Semiconductor Device Ltd., Toshiba Corporation, STMicroelectronics N.V., Fuji Electric Co. Ltd., and Vishay Intertechnology Inc.

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This release was published on openPR.