Silicon Carbide Epitaxial Wafer Market Revenue, Insights, Overview, Outlook, Analysis

The global Silicon Carbide Epitaxial Wafer market was valued at US$ 227.8 million in 2022 and is anticipated to reach US$ 1667.4 million by 2029, witnessing a CAGR of 32.5% during the forecast period 2023-2029.

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High-efficiency electric energy use is one of the major goals in the current trend of energy-saving actions for lowering CO2 emissions to help stop global warming. Power electronics devices must therefore perform better due to their widespread use in information communications, electric power generation, and home appliances. As a prospective replacement for that material, silicon carbide (SiC) has attracted interest. If successfully developed, a SiC power device is anticipated to be ten times more efficient than a-Si power device in terms of operating frequency, power loss, and operating temperature. This in turn is expected to drive the growth of the Silicon Carbide Epitaxial Wafer market.

The foundation of the electronics industry is the semiconductor silicon wafer, which continues to be a key component of many microelectronic devices. Since electronic mobility and digitization are the two current technological trends, many different gadgets are using these items. At the moment, there is a gap between market demand and industry supply for silicon wafers. This factor will further fuel the Silicon Carbide Epitaxial Wafer market.

The need for more functions from a single device has also increased due to the demand for small-sized gadgets. As a result, an IC chip needs to have more transistors in order to offer additional functionality. Thus, the development of wireless computing devices like smartphones and tablets has increased the design activity of semiconductor manufacturers. Additionally, throughout the course of the forecast period, several developments in the silicon epitaxial wafer market are anticipated to be driven by the expanding demand for miniaturization in electronics (caused by the necessity for thinner wafers that consume less power). This in turn is expected to fuel the Silicon Carbide Epitaxial Wafer market growth.

The market for Silicon Carbide Epitaxial Wafer is concentrated with players such as Cree (Wolfspeed), II-VI Advanced Materials (Ascatron), Showa Denko K.K.(NSSMC), Epiworld intenational, SK Siltron(Dupont), TYSiC, STMicroelectronics (Norstel), ROHM (Sicrystal) and so on. Among them, the top 3 manufacturers which include Cree (Wolfspeed), II-VI Advanced Materials (Ascatron), Showa Denko K.K.(NSSMC) are the leader with about 71% revenue market share in 2019.

We divide Silicon Carbide Epitaxial Wafer into 100 mm, 150 mm and 200 mm, 150 mm account for more than 60% revenue share in 2019.

600-1200V SiC Devices remains the largest application field, followed by 1200-3300V SiC Devices and above 3300V SiC Devices.

North America is the largest production area, accounting for 53.38% of the total market share. The Asia-Pacific region is expected to grow faster in the future.

Due to the increasing adoption of electronic devices across the region, notably in India, Japan, South Korea, and China, the Asia Pacific market is anticipated to expand at the quickest rate during the forecast period.

Segment by Type
100mm
150mm
200mm

Segment by Application
600-1200V SiC Devices
1200-3300V SiC Devices
Above 3300V SiC Devices

By Company
Cree (Wolfspeed)
II-VI Advanced Materials(Ascatron)
Showa Denko K.K.(NSSMC)
Epiworld international
SK Siltron(Dupont)
TYSiC
STMicroelectronics (Norstel)
ROHM (Sicrystal)

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