Insulated Gate Bipolar Transistor (IGBT) Market 2022 : Trends, Business Growth And Major Driving Factors | Renesas Electronics Corporation, Infineon Technologies AG, Fuji Electric Co Ltd, ROHM Co Ltd

The global insulated gate bipolar transistor market report by the business research company increased production of electric vehicles to be a major growth driver for the insulated gate bipolar transistor market. IGBT is a highly efficient component for EV motors due to its fast switching characteristics which lead to less power usage resulting in greater mileage. There will be a significant demand for IGBTs in response to the increased production of EVs. For instance, according to the International Energy Agency (IEA), there will be 125 million electric vehicles on the roads by 2030. The global electric car sales increased by roughly 140% in the first quarter of 2021 compared to the same period in 2020, owing to sales of around 500,000 vehicles in China and around 450,000 in Europe. Sales in the United States more than doubled in the first quarter of 2020, albeit from a very lower basis. Therefore, the increased production of electric vehicles drives the insulated gate bipolar transistor market.

The global insulated gate bipolar transistor market size is expected to grow from $6.30 billion in 2021 to $6.89 billion in 2022 at a compound annual growth rate (CAGR) of 9.39%. The global IGBT market size is expected to grow to $10.18 billion in 2026 at a CAGR of 10.23%.

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Asia-Pacific was the largest region in the insulated gate bipolar transistor (IGBT) market in 2021. The regions covered in the global IGBT market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East and Africa.

Major players in the insulated gate bipolar transistor market are Renesas Electronics Corporation, Infineon Technologies AG, Fuji Electric Co Ltd, ROHM Co Ltd, SEMIKRON International GmbH, ABB Ltd, Danfoss Group, Toshiba Corpotration, NXP Semiconductors NV, STMicroelectronics NV, Fairchild Semiconductor International Inc, Mitsubishi Electric Corporation, Hitachi Ltd, Littelfuse Inc, Starpower Semiconductor Ltd, Vishay Intertechnology and IXYS Corporation.

The global insulated gate bipolar transistors market is segmented -
1) By Type: Discrete, Modular
2) By Power Rating: High Power, Medium Power, Low Power
3) By End-User: EV/HEV, Renewables, UPS, Rail, Motor Drives, Industrial, Commercial

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The Insulated Gate Bipolar Transistor Market Report Contents Include
1. Executive Summary
2. Insulated Gate Bipolar Transistor (IGBT) Market Characteristics
3. Insulated Gate Bipolar Transistor (IGBT) Market Trends And Strategies
4. Impact Of COVID-19 On Insulated Gate Bipolar Transistor (IGBT)
5. Insulated Gate Bipolar Transistor (IGBT) Market Size And Growth
....
26. Africa Insulated Gate Bipolar Transistor Market
27. Insulated Gate Bipolar Transistor Market Competitive Landscape And Company Profiles
28. Key Mergers And Acquisitions In The Insulated Gate Bipolar Transistor (IGBT) Market
29. Insulated Gate Bipolar Transistor (IGBT) Market Future Outlook and Potential Analysis
30. Appendix

This report covers the trends and market dynamics of the Insulated Gate Bipolar Transistor market in major countries - Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Russia, South Korea, UK, and USA. The report also includes consumer surveys and various future opportunities for the market.

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