Press release
RF GaN (Radio-frequency Gallium Nitride) Market To Witness the Highest Growth Globally in Coming Years 2021-2026| Aethercomm Inc., Analog Devices Inc., Wolfspeed Inc. (Cree Inc.), Integra Technologies Inc
Latest research on RF GaN (Radio-frequency Gallium Nitride) Market report covers forecast and analysis on a worldwide, regional and country level. The study provides historical information of 2016-2020 together with a forecast from 2021 to 2026 supported by both volume and revenue (USD million). The entire study covers the key drivers and restraints for the RF GaN (Radio-frequency Gallium Nitride) market. this report included a special section on the Impact of COVID19. Also, RF GaN (Radio-frequency Gallium Nitride) Market (By major Key Players, By Types, By Applications, and Leading Regions) Segment’s outlook, Business assessment, Competition scenario and Trends. The report also gives 360-degree overview of the competitive landscape of the RF GaN (Radio-frequency Gallium Nitride) industry.The RF GaN Market was valued at USD 665.81 million in 2020, and it is projected to be worth USD 3,057.397 million by 2026, registering a CAGR of 30.58% during the period of 2020-2026.
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Top Companies in the Global RF GaN (Radio-frequency Gallium Nitride) Market: –
Aethercomm Inc., Analog Devices Inc., Wolfspeed Inc. (Cree Inc.), Integra Technologies Inc., MACOM Technology Solutions Holdings Inc., Microsemi Corporation (Microchip Technology Incorporated), Mitsubishi Electric Corporation, NXP Semiconductors NV, Qorvo Inc., STMicroelectronics NV, Sumitomo Electric Device Innovations Inc., HRL Laboratories, Raytheon Technologies, Mercury Systems, Inc
Industry news and development:
- July 2020 - Mitsubishi Electric Corporation developed a new technology to realize a gallium nitride (GaN) power amplifier module for 5G base-stations that offers a combination of compact (6mm by 10mm) footprint and extra-high power-efficiency, the latter exceeding an unprecedented rating of 43%. The module, which uses a minimum number of chip components in the matching circuit to control high-quality signal output, is expected to help realize 5G base-stations that are widely deployable and highly power efficient.
- March 2020 - STMicroelectronics NV announced an agreement to acquire a majority stake in French Gallium Nitride (GaN) innovator Exagan. Exagan’s expertise in epitaxy, product development and application know-how will broaden and accelerate ST’s power GaN roadmap and business for automotive, industrial and consumer applications. Exagan will continue to execute its product roadmap and be supported by ST to deploy its products.
Global RF GaN (Radio-frequency Gallium Nitride) Market Segmentation by Types:
GaN-on-Si
GaN-on-SiC
Other Material Types (GaN-on-GaN, GaN-on-Diamond)
Global RF GaN (Radio-frequency Gallium Nitride) Market Segmentation by Applications:
Military
Telecom Infrastructure (Backhaul, RRH, Massive MIMO, Small Cells)
Satellite Communication
Wired Broadband
Commercial Radar and Avionics
RF Energy
Key Market Trends
Strong Demand from Telecom Infrastructure Segment Driven by Advancements in 5G Implementation
- Owing to the ability to provide higher frequency data bandwidth connections, GaN RF technology is becoming the ideal choice for network service providers. These devices help in ensuring that the device generates maximum frequency at the necessary band and also prevents any interference from other frequency bands.
- The deployment of GaN RF power devices will enable advance mobile devices to offer speeds that will allow consumers to upload and download high-quality content, such as music and photographs and also play online games and watch online TV shows on maximum frequency bands, which is expected to lead to a rise in their adoption rates.
- Moreover, companies are investing in the development of 5G core services and architecture. For instance, ZTE Corporation, in January 2019, completed the IMT-2020 third phase of 5G test for core network performance stability and security function, thoroughly verifying the maturity of ZTE’s 5G core network.
Asia-Pacific is Expected to Experience Significant Growth
- The Asia-Pacific region's discrete semiconductor industry is driven by China, Japan, Taiwan, and South Korea, which together constitute around 65% of the global discrete semiconductor market, while others, like Vietnam, Thailand, Malaysia, and Singapore, also contribute significantly to the region's dominance in the market.
- According to the Indian Electronics and Semiconductor Association, the country's semiconductor component market is expected to be worth USD 32.35 billion by 2025, registering a CAGR of 10.1% (2018-2025). The country is a lucrative destination for global R&D centers. Thus, the Indian government's ongoing Make In India initiative is expected to result in huge investments in the semiconductor market.
Regional Analysis:
Furthermore, to broaden the understanding, researchers have studied the global RF GaN (Radio-frequency Gallium Nitride) market from a geographical point of view, considering the potential regions and countries. The regional analysis will assist the market players in making sound decisions regarding their future investments.
RF GaN (Radio-frequency Gallium Nitride) Market report includes the following geographic areas such as North America, Europe, China, Japan, Southeast Asia, India and ROW.
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Following are major Table of Content of RF GaN (Radio-frequency Gallium Nitride) Industry:
RF GaN (Radio-frequency Gallium Nitride) Market Sales Overview.
RF GaN (Radio-frequency Gallium Nitride) Market Sales Competition by Manufacturers.
RF GaN (Radio-frequency Gallium Nitride) Market Sales Analysis by Region.
RF GaN (Radio-frequency Gallium Nitride) Market Sales Analysis by Type.
RF GaN (Radio-frequency Gallium Nitride) Market Analysis by Application.
RF GaN (Radio-frequency Gallium Nitride) Market -Manufacturers Analysis.
Reasons to Invest:
Market Size Forecasts: The authors of the report have provided accurate estimation of the global RF GaN (Radio-frequency Gallium Nitride) market size based on value and volume
Market Trend Analysis: This section of the report throws light on the approaching trends and developments in the global RF GaN (Radio-frequency Gallium Nitride) market
Future Prospects: The report here offers crucial information on the rewarding opportunities in the global RF GaN (Radio-frequency Gallium Nitride) market
This allows an understanding of the market and benefits from any lucrative opportunities that are available. Researchers have offered a comprehensive study of the existing market scenario while concentrating on the new business objectives. There is a detailed analysis of the change in customer requirements, customer preferences and the vendor landscape of the overall market.
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