GaN Epitaxial Wafers Market Reserach 2021: Expotial Growth, Opportunity and Challenges to 2027 | openpr.com

An epitaxial wafer also known as, epi wafer, is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaic. The epitaxial layers consist of various compounds such as gallium nitride (GaN), gallium arsenide (GaAs), or some combination of the elements gallium, indium, aluminum, nitrogen, phosphorus or arsenic. High electron mobility, low switching losses, and fewer lattice mismatches are some of the key advantages of GaN Substrate, which are leading its adoption in industries such as power electronics and optoelectronics.

Furthermore, GaN epitaxial wafers are developed by hydride vapor-phase epitaxy (HVPE) or metal organic chemical vapor phase deposition (MOCVD) method, and can be used as an ideal and excellent substrate for high frequency, high speed, and high power devices. The GaN epitaxial wafers are developed by several firms such as Aixtron, EpiGaN nv, Sciocs, and Semiconductor Wafer Inc.

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GaN is widely implemented in radio frequency devices, light-emitting diodes (LEDs), and power electronics, due to its ability to operate at high frequency and high temperature. Increasing adoption of LEDs is a major factor boosting growth of the GaN epitaxial wafers market. Furthermore, advancement in GaN technology has led to the development of efficient GaN substrates with free macro defect density and low defect density. Hence, GaN substrates can increasingly be used for realizing LEDs with a wafer diameter from 2 inch up to 6 and 8 inch. Increasing adoption of LEDs is expected to drive growth of the GaN epitaxial wafers market during the forecast period. However, competition from Sic in high-voltage semiconductor applications and high product cost are factors which are expected to hinder growth of the global GaN epitaxial wafers market during the forecast period.

Key Players in the Global GaN Epitaxial Wafers Market:-
Key players in the global GaN epitaxial wafers market are RF Globalnet, Aixtron, EpiGaN nv, Sciocs, Semiconductor Wafer Inc. IGSS GaN, SweGaN, NTT Advanced Technology Corporation, Infineon Technologies AG, Mitsubishi Electric Corporation, Toshiba Infrastructure Systems & Solutions Corporation, Koninklijke Philips N.V., and ALLOS Semiconductors GmbH among others.

Global GaN Epitaxial Wafers Market Taxonomy:-

On the basis of product type, the global GaN epitaxial wafers market is segmented into:
• GaN Homoepitaxial Epitaxial Wafer
• GaN Heteroepitaxial Epitaxial Wafer

On the basis of wafer size, the global GaN epitaxial wafers market is segmented into:
• 2-Inch Wafer
• 4-Inch Wafer
• 8-Inch and Above Wafer

On the basis of application, the global GaN epitaxial wafers market is segmented into:
• LEDs
• Lasers
• Radio Frequency Devices
• Power Drives
• Transistors
• Others

On the basis of End-user Industry, the global GaN epitaxial wafers market is segmented into:
• IT & Telecommunications
• Industrial
• Automotive
• Renewable
• Consumer Electronics
• Military, Defense, & Aerospace
• Medical & Healthcare
• Others

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