Press release
GaN Power Device Market will Register a 30.5% CAGR During Period 2020-2026 | Know Which Companies Could Potentially Benefit or Loose out From the Impact of COVID-19
The Global GaN Power Device Market was valued at USD XX million in 2018 and is expected to reach USD XX million by 2026, growing at a CAGR of 30.5% by 2027.The ripple effect of Coronavirus-COVID19 on the GaN Power Device Market Ecosystem needs to become part of strategy discussions to emerge strong. The Analyst team is meticulously tracking the impact and relevance to all the sectors in the GaN Power Device Market. Key data sets include Revenue Impact analysis, Disruptions and New opportunities in the Supply Chain, Revised Vendor Landscape Mix, New opportunities mapping, and more.
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AllTheResearch offers a most recent distributed report on Global GaN Power Device industry examination and figure 2019-2025 conveying key bits of knowledge and giving an upper hand to customers through a point by point report. The report contains XX pages which profoundly displays on current market investigation situation, up and coming just as future chances, income development, evaluating and gainfulness.
Worldwide GaN Power Device Market inspect reports consolidate market designs nuances, genuine scene, feature assessment, cost structure, capability, bargains, net advantage, and movement and measuring of business.
Market Segmentation:
Following Top Key players are profiled in this Market Study:
Cree, Inc., Infineon Technologies AG, Qorvo, MACOM Technology Solutions, Microsemi Corporation, Mitsubishi Electric Corporation, Efficient Power Conversion (EPC), GaN Systems Inc., Navitas Semiconductor, Toshiba Corporation, Ganpower International Inc., Panasonic Corporation, Texas Instruments Incorporated, Ampleon, and Sumitomo Electric Industries, Ltd., among others
This report analyzed by End-use Industry: Telecommunications, Automotive, Consumer Electronics, Aerospace & Defense, Others (Healthcare and Industrial)
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Based on Device Type, the RF power device segment is expected to have the highest market share during the forecast period.
Based on the Device Type, the GaN power devices market has been segmented into power device and RF power device. The RF power device segment is expected to have the highest market share during the forecast period. The need for high power in the very high frequency, ultrahigh frequency, and microwave bands has created the demand for RF power devices, which can deliver tens to hundreds of watts at RF frequencies up to 10 GHz and beyond. Further.
Based on the End-use Industry, the automotive segment is anticipated to have the highest share in the market during the forecasted period.
Based on the End-use Industry, the market has been segmented into telecommunications, automotive, consumer electronics, aerospace & defense, and others. The other segment includes healthcare and industrial. The automotive segment is anticipated to have the highest market share during the forecast period.
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Regional Analysis:
North America
Europe
Asia Pacific
LATAM
Middle East Africa
Based on regions, the Asia Pacific region is anticipated to capture a significant portion of the global market during the forecast period.
The Asia Pacific GaN power devices market is anticipated to capture a significant portion of the global market during the forecast period. Rapid development in networking infrastructure and the presence of advanced IT Infrastructure are expected to accelerate the growth of the GaN power devices market. The demand for GaN power devices is increasing owing to the rising demand for power devices in the telecommunications, consumer electronics, industrial, automotive, and aerospace & defense verticals in emerging Asian countries, such as Japan, India, Taiwan, China, and the Philippines.
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