GaN Semiconductors Devices Market 2020 Global Industry Revenue by Growth Rate ,Top Key Players and forecast till 2025 : Toshiba, Panasonic, Cree, GaN Systems, Infineon Technologies

S Gallium Nitride (GaN) is a third band gap semiconductor widely used in LED diodes. Chemically, the compound is very tough and composed of Wurtzite crystalline structure. Additionally, GaN is the emerging substitute to pure silicon in the semiconductor sector. The properties of GaN are intense power efficient compound which is capable of working with high frequency and has the ability to emit high brightness and intensity when used in opto-semiconductor.

Gallium nitride semiconductor has more advantages over silicon technology in terms of temperature and power handling capacity. Gallium nitride has unique properties such as high-speed switching capacity, low resistance, high current density, high operating temperature, and a high dielectric strength. Additionally, gallium nitride semiconductors offer incomparable carrier mobility, three times the band gap and higher electric breakdown capabilities. With respect to highly efficient characteristics, GaN semiconductor are extensively used as transistors, diodes, power amplifiers, supply & inverter, amplifiers, lighting & laser, and switching systems.

MarketInsightsReports has recently published a research report titled, Global GaN Semiconductor Device Market. Primary and secondary research methodologies have been used to formulate this report. The analysis has been derived using historic and forecast. The report includes in-depth examination of geographical regions, revenue forecasts, segmentation, and market share.

The Global GaN Semiconductor Device market is expected to thrive in terms of volume and value during the forecast years. This report offers an understanding of various drivers, threats, opportunities, and restraints in the market. Analysts have used SWOT and Porter's five forces analysis to determine the effect these factors will have on the market growth during the forecast period.

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Top Companies operating in the Global GaN Semiconductor Device market profiled in the report : Toshiba, Panasonic, Cree, GaN Systems, Infineon Technologies, OSRAM, Efficient Power Conversion, NXP Semiconductors, Texas Instruments, NTT Advanced Technology.

The GaN semiconductor devices market valued at USD 977.21 million in 2019, and is expected to reach USD 2534.61 million by 2025, registering a CAGR of 17.15% over the forecast period of 2020-2025.

Global Industry News:

Osram and GaN Systems introduce ultrafast laser driver with high-power, multi-channel for LiDAR[03.01.2019 ] : Osram Opto Semiconductors, a leading optoelectronics company and global number 1 in automotive lighting, announced an ultrafast laser driver with a high-power, multi-channel Surface Mount (SMT) laser for LiDAR (Light detection and ranging) systems. Osram, the leader in LiDAR lasers, and GaN Systems, the leader in GaN power semiconductors, partnered to develop the breakthrough in laser driver technology that enables longer range and higher resolution LiDAR architectures.

Osram has continuously expanded its laser portfolio for LiDAR to accommodate the needs of customers, including increasing the peak power of the SPL DS90A_3 to 120 W at 40 A. In addition, Osram plans to release a four-channel SMT laser in 2019. The additional channels increase the field of view and total peak power, with each channel being capable of generating 120 W.

One of the issues with LiDAR technology has been its inability to transmit lasers at short pulses, while maintaining high peak power, which is necessary to ensure that the LiDAR is eye safe with a long range and high resolution. To address this need, Osram worked with GaN Systems to develop a laser driver with a one nanosecond pulse rise time, while driving all four channels at 40 A each to deliver 480 W peak power. This peak power then can be modulated at low-duty cycles to produce high resolution 3D cloud points at long range for new LiDAR designs.

Global GaN Semiconductor Device Market Split by Product Type and Applications:

Market Segment by Type, covers:
Power Semiconductors
Opto Semiconductors
RF Semiconductors

Market Segment by Applications, covers:
Automotive
Consumer Electronics
Aerospace & Defense
Healthcare

Information & Communication Technology
Regional Analysis For GaN Semiconductor Device Market:
North America (United States, Canada and Mexico)
Europe (Germany, France, UK, Russia and Italy)
Asia-Pacific (China, Japan, Korea, India and Southeast Asia)
South America (Brazil, Argentina, Colombia etc.)
Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria and South Africa)

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Influence of the GaN Semiconductor Device Market Report:
-Comprehensive assessment of all opportunities and risk in the GaN Semiconductor Device market.
-GaN Semiconductor Device market recent innovations and major events.
-Detailed study of business strategies for growth of the GaN Semiconductor Device market-leading players.
-Conclusive study about the growth plot of GaN Semiconductor Device market for forthcoming years.
-In-depth understanding of GaN Semiconductor Device market-particular drivers, constraints and major micro markets.
-Favourable impression inside vital technological and market latest trends striking the GaN Semiconductor Device market.

Furthermore, this study will help our clients solve the following issues:
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