Global GaN Power Device Market : Remarkable Growth, Competitive Landscape, Key Insights and Research Analysis

Gallium nitride (GaN) is used in production of semiconductor power devices and Radio-Frequency (RF) components and light emitting diodes (LEDs). GaN powered devices have proved efficient than silicon semiconductors in power conversion, RF, and analog applications. GaN conducts electrons over 1000 times more efficiently than silicon. Moreover, the manufacturing cost of GaN devices is lower than silicon, since GaN devices are produced using standard silicon manufacturing procedures in the same factories that currently produce conventional silicon semiconductors. The devices are much smaller for the same functional performance and can be produced per wafer.

GaN is lower on resistance giving lower conductance losses. The devices powered by GaN are faster that yield less switching losses and less capacitance results in less losses when charging and discharging devices. Moreover, GaN devices need less power to drive the circuit and require less space on the printed circuit board. These significant benefits of GaN over other alternatives such as silicon transistors are expected to fuel the overall growth of the GaN power device market.

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The main key players in the industry are-
Cree Inc., Efficient Power Conversion (EPC) Corporation, Infineon Technologies, GaN Systems Inc., Macom, Microsemi Corporation, Mitsubishi Electric Corporation, Navitas Semiconductor, Qorvo, Inc., and Toshiba Electronic Devices & Storage Corporation.

Can the country of specific interest be added?
Currently, the research report pays particular attention to the following regions:
North America (United States, Canada, Mexico), Europe (Germany, United Kingdom, France, Italy, Russia, Spain, etc.), South America (Brazil, Argentina, etc.) and Middle East and Africa (Saudi Arabia, South Africa, etc.)

Can we add or profile a new company according to our needs?
Yes, we can add or profile a new company according to customer needs in the report. Final confirmation should be provided by the research team depending on the difficulty of the investigation.
** The availability of data will be confirmed by research in the case of a private company. Up to 3 players can be added at no additional cost.

High cost of systems featuring integration of gallium nitride components due to capital intensive nature of materials and manufacturing procedures is expected to hamper growth of the market. Moreover, GaAs components are widely used in small signal Monolithic Microwave Integrated Circuit (MMIC) and low noise amplifier (LNA). Application of gallium nitride semiconductor is projected to become mainstream component, though it will require considerable time owing to the cost factor and thus, is among the prominent growth challenges.

Asia Pacific accounts for the largest population base and is also the largest market for key end-use industries, in turn, contributing to the largest consumer base of GaN power devices. According to Coherent Market Insights' analysis, China and India contribute to around 35% of the global population base. Moreover, largest consumer base for automotive, consumer electronics, communication, and industrial manufacturing will provide the strongest growth prospects over the forecast period.

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