Gallium Nitride Power Device Market Advanced Features to Underscore Lucrative Growth Opportunities with Major Key Players Cree, Efficient Power Conversion (EPC) Corporation, Infineon Technologies, GaN Systems, Macom, Microsemi Corporation

The global GaN power devices market includes the gallium nitride power and RF power devices that find predominant applications in power drives (electric vehicle drives, industrial drives, light detection), inverters, supplies, wireless charging, RF front end module, radars and space satellites. Extensive range of applications and the potential to cannibalize the existing silicon semiconductor market are expected to create immense opportunity for growth of the global GaN power devices market over the forecast period.

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Market Dynamics

GaN materials include a wide range of features such as wide energy band gap (3.4eV), high heat capacity, thermal conductivity, low device resistance, and ability to operate at transition speeds from on to off and vice versa, are among the prominent benefits, inadvertently driving growth of the GaN power devices market. High conductivity in On state in comparison to alternatives such as silicon substitutes present high opportunity to improve the energy efficiency in power distribution and control systems. However, limited availability and relatively high cost of the material is expected to hinder the overall growth of the market in the near future.

Key features of the study:

- This report provides in-depth analysis of GaN power devices, market size (US$ Million), and Cumulative Annual Growth Rate (CAGR %) for the forecast period (2017– 2025), considering 2016 as the base year
- It elucidates potential revenue opportunity across different segments and explains attractive investment proposition matrices for this market
- This study also provides key insights about market drivers, restraints, opportunities, new product launches or approvals, regional outlook, and competitive strategy adopted by the leading players
- It profiles leading players in the global GaN power devices market based on the following parameters – company overview, financial performance, product portfolio, geographical presence, GaN power devices market capital, key developments, strategies, and future plans
- Companies covered as part of this study include Cree Inc., Efficient Power Conversion (EPC) Corporation, Infineon Technologies, GaN Systems Inc., Macom, Microsemi Corporation, Mitsubishi Electric Corporation, Navitas Semiconductor, Qorvo, Inc., and Toshiba Electronic Devices & Storage Corporation
- Insights from this report would allow marketers and the management authorities of the companies to make informed decisions regarding their future product launches, product upgrades, market expansion, and marketing tactics
- The global GaN power devices market report caters to various stakeholders in this industry, including investors, suppliers, manufacturers, distributors, new entrants, and financial analysts
- Stakeholders would have ease in decision-making through the various strategy matrices used in analyzing the global GaN power devices market

Key companies of the global GaN power devices market:

Cree Inc., Efficient Power Conversion (EPC) Corporation, Infineon Technologies, GaN Systems Inc., Macom, Microsemi Corporation, Mitsubishi Electric Corporation, Navitas Semiconductor, Qorvo, Inc., and Toshiba Electronic Devices & Storage Corporation.

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Detailed Segmentation:

Global GaN Power Devices Market, By Device Type:

- Power Device
- RF Power Device

Global GaN Power Devices Market, By End User:

- Power Drives
- Supply and Inverter
- Radio Frequency

Global GaN Power Devices Market, By Vertical:

- Telecommunications
- Industrial
- Automotive
- Renewables
- Consumer and Enterprise
- Military, Defense, and Aerospace
- Medical

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This release was published on openPR.