FeRAM Market To Grow at 11.5% of CAGR by 2024 | Top Key Players: Fujitsu Cypress ROHM

FeRAM Market 2019

Ferroelectric random access memory (FeRAM) is a nonvolatile memory, in which data are stored using hysteretic P-E (polarization vs. electric field) characteristics in a ferroelectric film.

Ferroelectric random access memories (FeRAMs) are widely used in IC (integrated circuits) cards and RF (radio frequency) tags. Their features are (1) nonvolatile data storage (The stored data do not disappear even if electricity is turned off.), (2) the lowest power consumption among various semi-conductor memories, and (3) the operation speed as fast as that of DRAMs (dynamic RAMs).

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According to this study, over the next five years the FeRAM market will register a 11.5% CAGR in terms of revenue, the global market size will reach US$ 460 million by 2024, from US$ 240 million in 2019. 

The market is driven by various end-user industries, such as Metering / Measurement, Enterprise Storage, Automotive, Factory Automation, Telecommunications, Medical and so on. As the downstream consumption usually follows with developed and rapid economic growth areas, such as BRICS, the developed areas’ company prefers investing to underdevelopment regions these years.

FRAM (Ferroelectric Random Access Memory) is a non-volatile ferroelectric memory which uses ferroelectric film to preserve data. It incorporates both non-volatile, and random access, properties, preserving stored data for extended period even if power to the chip is turned off. The industry is high concentration and just have three brands include Fujitsu Ltd, Ramtron (Cypress Semiconductor) and LAPIS Semiconductor (ROHM).

FeRAM’s functional features can change the smart card security landscape compared with that of the existing electrically erasable programmable read-only memory (EEPROM) technologies. FeRAM is more resistant to data corruption through electric fields and radiation, among others. Also, the fast write times and the small process node make it more resistant to physical attacks. Furthermore, FeRAMs consume less power while operation and hence, they are equally power efficient as compared with other dominating non-volatile memory technologies.

The FeRAM market is characterized by the presence of many vendors. These vendors are increasingly competing against each other based on factors such as access to raw materials, economies of scales, product innovations, and ability to recycle as the cost of raw materials is very high. Vendors in FeRAM market are focusing on gaining faster access to the raw materials and lowering the manufacturing costs of FeRAM. They are also focusing on customization of products as per end-user industries.

Significant and lasting barriers make entry into this market difficult. These barriers include, but are not limited to: (i) product development costs; (ii) capital requirements; (iii) intellectual property rights; (iv) regulatory requirement; and (v) Transitions’ unfair methods of competition.

Despite the presence of competition problems, due to the global recovery trend is clear, investors are still optimistic about this area, the future will still have more new investment enter the field. Even so, the market is intensely competitive .The study group recommends the new entrants just having money but without technical advantage and upstream and downstream support do not to enter into this field.

This study considers the FeRAM value and volume generated from the sales of the following segments:

Segmentation by product type: 
4K to 128K
256K to 2M
Above 2M

Segmentation by application: 
Metering/Measurement
Enterprise Storage
Automotive
Factory Automation
Telecommunications
Medical
Others

The report also presents the market competition landscape and a corresponding detailed analysis of the major vendor/manufacturers in the market. The key manufacturers covered in this report: 
Fujitsu
Cypress
ROHM

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