3D NAND Flash Memory Market to Reach $99.77 Billion by 2025 Registering a CAGR 35.3% | Key Players Intel Corporation, Micron Technology, Toshiba Corporation, Samsung Electronics and Others

The memory market for the semiconductor segment has witnessed steady growth due to continuous improvements in technology and increase in demand for data storage. 3D NAND flash memory technology has been increasingly utilized in various applications due to increase in demand for data storage. It offers large storage space while operating faster at a rather reduced cost.

Increase in disposable income of the North American population drives the sales of the equipped 3D NAND flash memory devices. With growing demand for advanced products with improved features and larger storage, the need for energy-efficient memory devices is expected to fuel the market growth. Moreover, the advent of Internet of Things (IoT) has established a connected world that generates large volume of data, which needs to be secured. This increase in need for secure storage drives the 3D NAND flash memory market, thereby providing lucrative opportunities for the market growth during the forecast period.

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Traditionally, memory cells were crammed into a 2D layout to increase the storage capacity of the 2D planer-die. Owing to the relentless drive of shrinking the chip size coupled with the need for augmenting storage space, the evolution of 3D architecture became necessary. Moreover, this cramming of memory cells created physical problems such as electrons leakage, cell-to-cell interference, and degradation in the overall performance of the memory chip. The 3D flash combats these problems due to its vertical stack design leading to an increased per-chip storage capacity.

The global 3D NAND flash memory market is expected to be $ 9,056.2 million in 2017, and is projected to reach $ 99,769.0 million by 2025, registering a CAGR of 35.3% from 2018 to 2025. Asia-Pacific is expected to account for the highest revenue in the global market throughout the forecast period (2018–2025).

The major players operating in the global 3D NAND flash memory market are Samsung Electronics Co., Ltd., Toshiba Corporation, SK Hynix Semiconductor, Inc., Micron Technology, Inc., Intel Corporation, Apple Inc., Lenovo Group Ltd., Advanced Micro Devices, STMicroelectronics, and SanDisk Corporation.

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3D NAND Flash Memory Market Segmentation:

By Type
• Single-Level Cell (SLC)
• Multi-Level Cell (MLC)
• Triple-Level Cell (TLC)

By Application
• Cameras
• Laptops & PCs
• Smartphone & Tablets
• Others

By End User
• Automotive
• Consumer Electronics
• Enterprise
• Healthcare
• Others

By Region
• North America
• Europe
• Asia-Pacific
• LAMEA

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