Press release
Global Gallium Nitride Semiconductor Device Market is expected to garner USD 29.2 billion by 2025 with By Major Vendors: Cree, Samsung, Infineon, Qorvo, MACOM
Global Gallium Nitride (GaN) Semiconductor Device Market valued approximately USD 17.01 billion in 2016 is anticipated to grow with a healthy growth rate of more than 6.2% over the forecast period 2017-2025. Increasing use of Laptops, TVs and mobile phones and other gadgets, growing need of low power consuming electronic appliances, demand for radio frequency in power electronics, energy efficiency in consumer goods, rising use of electric vehicle are the major factors which are driving the Global Gallium Nitride (GaN) Semiconductor Device Market. The Gallium Nitrite is basically a semiconductor that is used in the manufacturing of light-emitting diodes (LEDs), power devices and high radio frequency devices.
A Gallium Nitride semiconductor has several benefits over silicon-based devices such as its operating temperature is very high, low resistance, high breakdown voltage and high-speed switching capacity that makes it a good alternative to silicon technology. With the use of Gallium Nitride, the production cost of integrated circuits has reduced. The GaN semiconductors are being used in transistors, amplifiers, diodes, switching systems, inverters and lighting industries. Moreover, the use of GaN semiconductors are growing in Defense, aerospace application and healthcare sector. The use of gallium nitride semiconductor devices are growing in various industries like consumer electronics, automotive, industrial and telecommunication and the rising use of electric and hybrid vehicle are setting new prospects in the overall growth of the GaN semiconductors market. However, the overall manufacturing cost of GaN semiconductor is very high as compared to silicon-based semiconductor and it is a reason for obstruction of Global Gallium Nitride (GaN) Semiconductor Device Market.
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The regional analysis of Global Gallium Nitride (GaN) Semiconductor Device Market is considered for the key regions such as Asia Pacific, North America, Europe, Latin America and Rest of the World. North America is the leading/significant region across the world in terms of market share. Whereas, owing to the countries such as China, Japan, and India, Asia Pacific region is anticipated to exhibit higher growth rate / CAGR over the forecast period 2018-2025.
The objective of the study is to define market sizes of different segments & countries in recent years and to forecast the values to the coming eight years. The report is designed to incorporate both qualitative and quantitative aspects of the industry within each of the regions and countries involved in the study. Furthermore, the report also caters the detailed information about the crucial aspects such as driving factors & challenges which will define the future growth of the market. Additionally, the report shall also incorporate available opportunities in micro markets for stakeholders to invest along with the detailed analysis of competitive landscape and product offerings of key players. The detailed segments and sub-segment of the market are explained below:
By Device Type:
Opto
Power
RF
By Wafer Size:
2 Inch
4 Inch
6 Inch and above
By Application:
Power Drives
Supply and Inverter
RF
Lighting and Laser
IT & Telecommunication
By Vertical:
Telecommunication
Consumer
Automotive
By Regions:
North America
U.S.
Canada
Europe
UK
Germany
Asia Pacific
China
India
Japan
Latin America
Brazil
Mexico
Rest of the World
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Furthermore, years considered for the study are as follows:
Historical year 2015, 2016
Base year 2017
Forecast period 2018 to 2025
The industry is seeming to be fairly competitive. Some of the leading market players include Cree, Samsung, Infineon, Qorvo, MACOM, Microsemi Corporation, Analog Devices, Mitsubishi Electric, Efficient Power Conversion, GaN Systems, Exagan, VisIC Technologies, Integra Technologies, Transphorm, Navitas Semiconductor, Nichia, Panasonic, Texas Instruments, Ampleon, Sumitomo Electric, Northrop Grumman Corporation, Dialog Semiconductor, Epistar, RF Micro Devices Corporation, Osram Opto-semiconductors, Aixtron SE, Gallia Semiconductor, ROHM Company Limited and so on. Acquisitions and effective mergers are some of the strategies adopted by the key manufacturers. New product launches and continuous technological innovations are the key strategies adopted by the major players.
Target Audience of the Global Gallium Nitride (GaN) Semiconductor Device Market in Market Study:
Key Consulting Companies & Advisors
Large, medium-sized, and small enterprises
Venture capitalists
Value-Added Resellers (VARs)
Third-party knowledge providers
Investment bankers
Investors
Chapter 1. Global Gallium Nitride (GaN) Semiconductor Devices Market Definition and Scope
1.1. Research Objective
1.2. Market Definition
1.3. Scope of The Study
1.4. Years Considered for The Study
1.5. Currency Conversion Rates
1.6. Report Limitation
Chapter 2. Research Methodology
2.1. Research Process
2.1.1. Data Mining
2.1.2. Analysis
2.1.3. Market Estimation
2.1.4. Validation
2.1.5. Publishing
2.2. Research Assumption
Chapter 3. Executive Summary
3.1. Global & Segmental Market Estimates & Forecasts, 2015-2025 (USD Billion)
3.2. Key Trends
Chapter 4. Global Gallium Nitride (GaN) Semiconductor Devices Market Dynamics
4.1. Growth Prospects
4.1.1. Drivers
4.1.2. Restraints
4.1.3. Opportunities
4.2. Industry Analysis
4.2.1. Porters 5 Force Model
4.2.2. PEST Analysis
4.2.3. Value Chain Analysis
4.3. Analyst Recommendation & Conclusion
Chapter 5. Global Gallium Nitride (GaN) Semiconductor Devices Market, By Device Type
5.1. Market Snapshot
5.2. Market Performance - Potential Model
5.3. Global Gallium Nitride (GaN) Semiconductor Devices Market, Sub Segment Analysis
5.3.1. Opto
5.3.1.1. Market estimates & forecasts, 2015-2025 (USD Billion)
5.3.1.2. Regional breakdown estimates & forecasts, 2015-2025 (USD Billion)
5.3.2. Power
5.3.2.1. Market estimates & forecasts, 2015-2025 (USD Billion)
5.3.2.2. Regional breakdown estimates & forecasts, 2015-2025 (USD Billion)
5.3.3. RF
…….
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