12-07-2018 06:39 AM CET - Media & Telecommunications

SiC & GaN Power Devices Market Outlook To 2023 – Infineon, Rohm, Mitsubishi, STMicro, Fuji, Toshiba, Microsemi, United Silicon Carbide Inc., GeneSic, Efficient Power Conversion (EPC), GaN Systems, VisIC Technologies LTD

SiC & GaN Power Devices Market
SiC & GaN Power Devices Market

Dec 2018, New York USA (News) - SiC & GaN Power Devices used in industry including Consumer Electronics, Automotive & Transportation, Industrial Use and Others. Report data showed that 34.05% of the SiC & GaN Power Devices market demand in Industrial Use, 28.76% in Consumer Electronics in 2016.
There are two kinds of SiC & GaN Power Devices, which are SiC and GaN Power Devices. SiC Power Devices is important in the SiC & GaN Power Devices, with a production revenue market share nearly 91.40% in 2016.
Briefly speaking, in the next few years, SiC & GaN Power Devices industry will be a rapid development industry. Sales of SiC & GaN Power Devices have brought a lot of opportunities, there will more companies enter into this industry, especially in developing countries.
Over the next five years, RRI Information projects that SiC & GaN Power Devices will register a 32.8% CAGR in terms of revenue, reach US$ 1780 million by 2023, from US$ 320 million in 2017.

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Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors. Silicon Carbide (SiC) and gallium nitride (GaN) Power Devices are the mainly used Wide-bandgap semiconductors materials.
Infineon is the largest production Cmpany for SiC & GaN Power Devices, with a production value market share nearly 49.01% in 2016.

Major Market Players
• Infineon
• Rohm
• Mitsubishi
• STMicro
• Fuji
• Toshiba
• Microsemi
• United Silicon Carbide Inc.
• GeneSic
• Efficient Power Conversion (EPC)
• GaN Systems
• VisIC Technologies LTD

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Segmentation by product type:
• GaN
• SiC
Segmentation by application:
• Consumer Electronics
• Automotive & Transportation
• Industrial Use
• Others

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Research objectives
To study and analyze the global SiC & GaN Power Devices consumption (value & volume) by key regions/countries, product type and application, history data from 2013 to 2017, and forecast to 2023.
To understand the structure of SiC & GaN Power Devices market by identifying its various subsegments.
Focuses on the key global SiC & GaN Power Devices manufacturers, to define, describe and analyze the sales volume, value, market share, market competition landscape, SWOT analysis and development plans in next few years.
To analyze the SiC & GaN Power Devices with respect to individual growth trends, future prospects, and their contribution to the total market.
To share detailed information about the key factors influencing the growth of the market (growth potential, opportunities, drivers, industry-specific challenges and risks).

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