Global Gallium Nitride Semiconductor Device Market 2018 Top Players – Samsung Infineon, Qorvo , MACOM, Microsemi Corporation, Mitsubishi Electric, Efficient Power Conversion., GaN Systems ,Exagan and many more

Global Gallium Nitride Semiconductor Device Market to reach USD 29.2 billion by 2025.Global Gallium Nitride (GaN) Semiconductor Device Market valued approximately USD 17.01 billion in 2016 is anticipated to grow with a healthy growth rate of more than 6.2% over the forecast period 2017-2025. Increasing use of Laptops, TVs and mobile phones and other gadgets, growing need of low power consuming electronic appliances, demand for radio frequency in power electronics, energy efficiency in consumer goods, rising use of electric vehicle are the major factors which are driving the Global Gallium Nitride (GaN) Semiconductor Device Market. The Gallium Nitrite is basically a semiconductor that is used in the manufacturing of light-emitting diodes (LEDs), power devices and high radio frequency devices.

A Gallium Nitride semiconductor has several benefits over silicon-based devices such as its operating temperature is very high, low resistance, high breakdown voltage and high-speed switching capacity that makes it a good alternative to silicon technology. With the use of Gallium Nitride, the production cost of integrated circuits has reduced.

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The GaN semiconductors are being used in transistors, amplifiers, diodes, switching systems, inverters and lighting industries. Moreover, the use of GaN semiconductors are growing in Defense, aerospace application and healthcare sector. The use of gallium nitride semiconductor devices are growing in various industries like consumer electronics, automotive, industrial and telecommunication and the rising use of electric and hybrid vehicle are setting new prospects in the overall growth of the GaN semiconductors market. However, the overall manufacturing cost of GaN semiconductor is very high as compared to silicon-based semiconductor and it is a reason for obstruction of Global Gallium Nitride (GaN) Semiconductor Device Market.

Segmentation:

The Global Gallium Nitride Semiconductor Device Market Analysis and Forecasts to 2025 can be segmented into By Device Type, By Wafer Size, By Application and By Vertical. Based on Device Type  Opto, Power and RF. Based on Wafer Size 2 – Inch, 4 – Inch
and 6 – Inch and above. Based on by Application Power Drives, Supply and Inverter,
RF, Lighting and Laser and  IT & Telecommunication. Based on by Vertical Telecommunication, Consumer and  Automotive.

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Global Gallium Nitride Semiconductor Device  Market Players List:

Cree
Samsung
Infineon
Qorvo
 MACOM
 Microsemi Corporation
 Analog Devices
 Mitsubishi Electric
 Efficient Power Conversion
 GaN Systems
 Exagan
 VisIC Technologies
 Integra Technologies
 Transphorm
Navitas Semiconductor
 Nichia
Panasonic
Texas Instruments
Ampleon
Sumitomo Electric
Northrop Grumman Corporation
Dialog Semiconductor
Epistar
RF Micro Devices Corporation
Osram Opto-semiconductors
Aixtron SE
Gallia Semiconductor
ROHM Company Limited
Regional Overview:

The regional analysis of Global Gallium Nitride (GaN) Semiconductor Device Market is considered for the key regions such as Asia Pacific, North America, Europe, Latin America and Rest of the World. North America is the leading/significant region across the world in terms of market share. Whereas, owing to the countries such as China, Japan, and India, Asia Pacific region is anticipated to exhibit higher growth rate / CAGR over the forecast period 2018-2025.The objective of the study is to define market sizes of different segments & countries in recent years and to forecast the values to the coming eight years.

Major TOC Contents

Chapter 1 Global Gallium Nitride (GaN) Semiconductor Devices Market Definition and Scope
1.1 Research Objective
1.2 Market Definition
1.3 Scope of The Study
1.4 Years Considered for The Study
1.5 Currency Conversion Rates
1.6 Report Limitation
Chapter 2. Research Methodology
2.1 Research Process
2.1.1 Data Mining
2.1.2 Analysis
2.1.3 Market Estimation
2.1.4 Validation
2.1.5 Publishing
2.2 Research Assumption
Chapter 3 Executive Summary
3.1 Global & Segmental Market Estimates & Forecasts, 2015-2025 (USD Billion)
3.2 Key Trends
Chapter 4 Global Gallium Nitride (GaN) Semiconductor Devices Market Dynamics
4.1 Growth Prospects
4.1.1 Drivers
4.1.2 Restraints
4.1.3 Opportunities
4.2 Industry Analysis
4.2.1 Porter’s 5 Force Model
4.2.2 PEST Analysis
4.2.3 Value Chain Analysis
4.3 Analyst Recommendation & Conclusion

TOC to be Continued.!

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