Press release
Global Gallium Nitride Semiconductor Device Market 2018 Top Players – Samsung Infineon, Qorvo , MACOM, Microsemi Corporation, Mitsubishi Electric, Efficient Power Conversion., GaN Systems ,Exagan and many more
Gallium Nitride Semiconductor Device Market
A Gallium Nitride semiconductor has several benefits over silicon-based devices such as its operating temperature is very high, low resistance, high breakdown voltage and high-speed switching capacity that makes it a good alternative to silicon technology. With the use of Gallium Nitride, the production cost of integrated circuits has reduced.
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The GaN semiconductors are being used in transistors, amplifiers, diodes, switching systems, inverters and lighting industries. Moreover, the use of GaN semiconductors are growing in Defense, aerospace application and healthcare sector. The use of gallium nitride semiconductor devices are growing in various industries like consumer electronics, automotive, industrial and telecommunication and the rising use of electric and hybrid vehicle are setting new prospects in the overall growth of the GaN semiconductors market. However, the overall manufacturing cost of GaN semiconductor is very high as compared to silicon-based semiconductor and it is a reason for obstruction of Global Gallium Nitride (GaN) Semiconductor Device Market.
Segmentation:
The Global Gallium Nitride Semiconductor Device Market Analysis and Forecasts to 2025 can be segmented into By Device Type, By Wafer Size, By Application and By Vertical. Based on Device Type Opto, Power and RF. Based on Wafer Size 2 – Inch, 4 – Inch
and 6 – Inch and above. Based on by Application Power Drives, Supply and Inverter,
RF, Lighting and Laser and IT & Telecommunication. Based on by Vertical Telecommunication, Consumer and Automotive.
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Global Gallium Nitride Semiconductor Device Market Players List:
Cree
Samsung
Infineon
Qorvo
MACOM
Microsemi Corporation
Analog Devices
Mitsubishi Electric
Efficient Power Conversion
GaN Systems
Exagan
VisIC Technologies
Integra Technologies
Transphorm
Navitas Semiconductor
Nichia
Panasonic
Texas Instruments
Ampleon
Sumitomo Electric
Northrop Grumman Corporation
Dialog Semiconductor
Epistar
RF Micro Devices Corporation
Osram Opto-semiconductors
Aixtron SE
Gallia Semiconductor
ROHM Company Limited
Regional Overview:
The regional analysis of Global Gallium Nitride (GaN) Semiconductor Device Market is considered for the key regions such as Asia Pacific, North America, Europe, Latin America and Rest of the World. North America is the leading/significant region across the world in terms of market share. Whereas, owing to the countries such as China, Japan, and India, Asia Pacific region is anticipated to exhibit higher growth rate / CAGR over the forecast period 2018-2025.The objective of the study is to define market sizes of different segments & countries in recent years and to forecast the values to the coming eight years.
Major TOC Contents
Chapter 1 Global Gallium Nitride (GaN) Semiconductor Devices Market Definition and Scope
1.1 Research Objective
1.2 Market Definition
1.3 Scope of The Study
1.4 Years Considered for The Study
1.5 Currency Conversion Rates
1.6 Report Limitation
Chapter 2. Research Methodology
2.1 Research Process
2.1.1 Data Mining
2.1.2 Analysis
2.1.3 Market Estimation
2.1.4 Validation
2.1.5 Publishing
2.2 Research Assumption
Chapter 3 Executive Summary
3.1 Global & Segmental Market Estimates & Forecasts, 2015-2025 (USD Billion)
3.2 Key Trends
Chapter 4 Global Gallium Nitride (GaN) Semiconductor Devices Market Dynamics
4.1 Growth Prospects
4.1.1 Drivers
4.1.2 Restraints
4.1.3 Opportunities
4.2 Industry Analysis
4.2.1 Porter’s 5 Force Model
4.2.2 PEST Analysis
4.2.3 Value Chain Analysis
4.3 Analyst Recommendation & Conclusion
TOC to be Continued.!
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