Global Ferroelectric RAM Market, Size, Industry Player (Fujitsu, Texas Instruments, IBM, Infineon Key County Analysis (United States, Europe, China, Japan, India), Segmentation, Analysis and Forecast till 2018-2025

This research report titled “Global Ferroelectric RAM Market Insights, Forecast to 2025” has been added to the wide online database managed by Market Research Hub (MRH). The study discusses the prime market growth factors along with future projections expected to impact the Ferroelectric RAM market during the period between 2018 and 2025. The concerned sector is analyzed based on different market factors including drivers, restraints and opportunities in order to enlighten the readers about the actual scenario prevailing in the Ferroelectric RAM market.

Request for free Sample @ https://www.marketresearchhub.com/enquiry.php?type=S&repid=1926398

This report presents the worldwide Ferroelectric RAM market size (value, production and consumption), splits the breakdown (data status 2013-2018 and forecast to 2025), by manufacturers, region, type and application.
This study also analyzes the market status, market share, growth rate, future trends, market drivers, opportunities and challenges, risks and entry barriers, sales channels, distributors and Porter's Five Forces Analysis.

Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.

FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).

A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material.

When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary "0"s and "1"s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a "1" is encoded using the negative remnant polarization "-Pr", and a "0" is encoded using the positive remnant polarization "+Pr".In terms of operation, FeRAM is similar to DRAM.

Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the "up" or "down" orientation (depending on the polarity of the charge), thereby storing a "1" or "0". Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say "0". If the cell already held a "0", nothing will happen in the output lines. If the cell held a "1", the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the "down" side. The presence of this pulse means the cell held a "1". Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.

Ferroelectric RAM was proposed by MIT graduate student Dudley Allen Buck in his master's thesis, Ferroelectrics for Digital Information Storage and Switching, published in 1952. Development of FeRAM began in the late 1980s. Work was done in 1991 at NASA's Jet Propulsion Laboratory on improving methods of read out, including a novel method of non-destructive readout using pulses of UV radiation. Much of the current FeRAM technology was developed by Ramtron, a fabless semiconductor company. One major licensee is Fujitsu, who operates what is probably the largest semiconductor foundry production line with FeRAM capability. Since 1999 they have been using this line to produce standalone FeRAMs, as well as specialized chips (e.g. chips for smart cards) with embedded FeRAMs.

Fujitsu produced devices for Ramtron until 2010. Since 2010 Ramtron's fabricators have been TI (Texas Instruments) and IBM. Since at least 2001 Texas Instruments has collaborated with Ramtron to develop FeRAM test chips in a modified 130 nm process. In the fall of 2005, Ramtron reported that they were evaluating prototype samples of an 8-megabit FeRAM manufactured using Texas Instruments' FeRAM process. Fujitsu and Seiko-Epson were in 2005.
collaborating in the development of a 180 nm FeRAM process. In 2012 Ramtron was acquired by Cypress Semiconductor. FeRAM research projects have also been reported at Samsung, Matsushita, Oki, Toshiba, Infineon, Hynix, Symetrix, Cambridge University, University of Toronto, and the Interuniversity Microelectronics Centre (IMEC, Belgium).
The Ferroelectric RAM market was valued at 240 Million US$ in 2017 and is projected to reach 300 Million US$ by 2025, at a CAGR of 3.0% during the forecast period. In this study, 2017 has been considered as the base year and 2018 to 2025 as the forecast period to estimate the market size for Ferroelectric RAM.

The following manufacturers are covered in this report:
Cypress Semiconductor
Fujitsu
Texas Instruments
IBM
Infineon

Ferroelectric RAM Breakdown Data by Type
Serial Memory
Parallel Memory
Others
Ferroelectric RAM Breakdown Data by Application
Smart Meters
Automotive Electronics
Medical Devices
Wearable Devices

Ferroelectric RAM Production by Region
United States
Europe
China
Japan
South Korea
Other Regions

Ferroelectric RAM Consumption by Region
North America
United States
Canada
Mexico
Asia-Pacific
China
India
Japan
South Korea
Australia
Indonesia
Malaysia
Philippines
Thailand
Vietnam
Europe
Germany
France
UK
Italy
Russia
Rest of Europe
Central & South America
Brazil
Rest of South America
Middle East & Africa
GCC Countries
Turkey
Egypt
South Africa
Rest of Middle East & Africa

The study objectives are:
To analyze and research the global Ferroelectric RAM status and future forecastinvolving, production, revenue, consumption, historical and forecast.
To present the key Ferroelectric RAM manufacturers, production, revenue, market share, and recent development.
To split the breakdown data by regions, type, manufacturers and applications.

To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
To identify significant trends, drivers, influence factors in global and regions.
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.

In this study, the years considered to estimate the market size of Ferroelectric RAM :
History Year: 2013 - 2017
Base Year: 2017
Estimated Year: 2018
Forecast Year: 2018 - 2025

This report includes the estimation of market size for value (million USD) and volume (M Units). Both top-down and bottom-up approaches have been used to estimate and validate the market size of Ferroelectric RAM market, to estimate the size of various other dependent submarkets in the overall market. Key players in the market have been identified through secondary research, and their market shares have been determined through primary and secondary research. All percentage shares, splits, and breakdowns have been determined using secondary sources and verified primary sources.

Browse Full Report with TOC@ https://www.marketresearchhub.com/report/global-ferroelectric-ram-market-insights-forecast-to-2025-report.html

Table of Contents

1 Study Coverage
1.1 Ferroelectric RAM Product
1.2 Key Market Segments in This Study
1.3 Key Manufacturers Covered
1.4 Market by Type
1.4.1 Global Ferroelectric RAM Market Size Growth Rate by Type
1.4.2 Serial Memory
1.4.3 Parallel Memory
1.4.4 Others
1.5 Market by Application
1.5.1 Global Ferroelectric RAM Market Size Growth Rate by Application
1.5.2 Smart Meters
1.5.3 Automotive Electronics
1.5.4 Medical Devices
1.5.5 Wearable Devices
1.6 Study Objectives
1.7 Years Considered

2 Executive Summary
2.1 Global Ferroelectric RAM Market Size
2.1.1 Global Ferroelectric RAM Revenue 2013-2025
2.1.2 Global Ferroelectric RAM Production 2013-2025
2.2 Ferroelectric RAM Growth Rate (CAGR) 2018-2025
2.3 Analysis of Competitive Landscape
2.3.1 Manufacturers Market Concentration Ratio (CR5 and HHI)
2.3.2 Key Ferroelectric RAM Manufacturers
2.3.2.1 Ferroelectric RAM Manufacturing Base Distribution, Headquarters
2.3.2.2 Manufacturers Ferroelectric RAM Product Offered
2.3.2.3 Date of Manufacturers Enter into Ferroelectric RAM Market
2.4 Key Trends for Ferroelectric RAM Markets & Products

3 Market Size by Manufacturers
3.1 Ferroelectric RAM Production by Manufacturers
3.1.1 Ferroelectric RAM Production by Manufacturers
3.1.2 Ferroelectric RAM Production Market Share by Manufacturers
3.2 Ferroelectric RAM Revenue by Manufacturers
3.2.1 Ferroelectric RAM Revenue by Manufacturers (2013-2018)
3.2.2 Ferroelectric RAM Revenue Share by Manufacturers (2013-2018)
3.3 Ferroelectric RAM Price by Manufacturers
3.4 Mergers & Acquisitions, Expansion Plans

Continue...@@$

Enquire about this Report - https://www.marketresearchhub.com/enquiry.php?type=enquiry&repid=1926398

About Market Research Hub:

Market Research Hub (MRH) is a next-generation reseller of research reports and analysis. MRH’s expansive collection of market research reports has been carefully curated to help key personnel and decision makers across industry verticals to clearly visualize their operating environment and take strategic steps.

MRH functions as an integrated platform for the following products and services: Objective and sound market forecasts, qualitative and quantitative analysis, incisive insight into defining industry trends, and market share estimates. Our reputation lies in delivering value and world-class capabilities to our clients.

Contact Details:

90 State Street,
Albany, NY 12207,
United States
Toll Free : 800-998-4852 (US-Canada)
Email : press@marketresearchhub.com
Website : www.marketresearchhub.com/

This release was published on openPR.